Electrical Characteristics of Thermal Spray Silicon Coatings

2000 ◽  
Vol 624 ◽  
Author(s):  
S.Y. Tan ◽  
R.J. Gambino ◽  
R. Goswami ◽  
S. Sampath ◽  
H. Herman
Keyword(s):  
Silicon Substrate ◽  
Resistivity Measurement ◽  
Thermal Spraying ◽  
Monocrystalline Silicon ◽  
Vacuum Plasma Spray ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Van Der Pauw ◽  
Characteristic Pressure

ABSTRACTPolycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measurement. Hall mobility measurements, combined with photoconductivity results, indicate that the highly conductive silicon deposit displays the same range of mobility as a polycrystalline deposit containing only Si-I. The silicon deposit, with or without metastable phases, displays the same photoconductivity properties. The silicon deposit on a monocrystalline silicon substrate exhibits rectifying I–Vcharacteristics, possibly caused by band bending of trapping states associated with impurities segregating at the polycrystalline deposit/monocrystalline substrate interface

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Electrical Characteristics of Thin Cerium Oxide Film on Silicon Substrate by Reactive DC Sputtering

2001 ◽  
Vol 4 (9) ◽  
pp. F15 ◽  
Author(s):  
Tung Ming Pan ◽  
Chao Hsin Chien ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Tiao Yuan Huang
Keyword(s):  
Oxide Film ◽  
Cerium Oxide ◽  
Silicon Substrate ◽  
Electrical Characteristics ◽  
Dc Sputtering

Assessment of Laser Effects on the Structure and Electrical Properties of the Compound Bi2-xAgxSr2Ca2Cu3O10+δ Superconducting

2021 ◽  
Vol 19 (11) ◽  
pp. 108-115
Author(s):  
Nihad Ali Shafeek
Keyword(s):  
Critical Temperature ◽  
Hydraulic Press ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray ◽  
Compensation Ratio ◽  
Superconducting Compound ◽  
State Method ◽  
Two Stages

This research contains preparing the superconducting compound Bi2-xAgxSr2Ca2Cu3O10+δ and studying its structural and electrical characteristics. The samples were prepared using the solid-state method in two stages, and different concentrations of x were (x= 0.2,0.4,0.6,0.8) replaced instead of bismuth Bi. Then, using a hydraulic press 9 ton/cm2 and sintering with a temperature of 850°C, the samples were pressed. Next, x-ray diffraction is used to study the structural properties. The study of these samples was presented in different proportions of x values, where x = 0.4 is the best compensation ratio of x. A critical temperature of 1400C and the Tetragonal structure was got. After that, the effect of laser nidinium _ yak (Nd: YAG laser) was used on the compositional. It was found that the temperature value increased, so we got the best critical temperature, which is 142 0C.

Oxidation Properties of NIAI Intermetallic Coatings Prepared by High Velocity Oxy-Fuel Thermal Spraying

1998 ◽  
Author(s):  
J.A. Hearley ◽  
J.A. Little ◽  
A.J. Sturgeon
Keyword(s):  
High Velocity ◽  
Low Carbon Steel ◽  
Thermal Spraying ◽  
Liquid Fuels ◽  
Low Carbon ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Hvof Process ◽  
Diffusion Studies ◽  
Oxidation Properties

Abstract A reaction-formed NiAI intermetallic compound (IMC) powder has been deposited as a coating onto low carbon steel test coupons by the High Velocity Oxy-Fuel (HVOF) process using both gaseous and liquid fuels. The microstructure of this coating has been examined using scanning electron microscopy and x-ray diffraction and was found to depend on spraying conditions. Oxidation tests on the coating in air, between the temperatures of 800°C-1200°C, revealed that an a-alumina (Al2O3) scale formed on the coating's surface. At 1200°C, a nickel spinel (NiO/NiAl2O4) and haematite (Fe2O3) phases were observed. Diffusion studies were performed to calculate an activation energy for iron ion diffusion in NiAl.

Production and Characterization of HVOF Sprayed NiCr-TiC Coatings Using SHS Powder Feedstock

2000 ◽  
Author(s):  
M.T. Blatchford ◽  
A.J. Horlock ◽  
D.G. McCartney ◽  
P.H. Shipway ◽  
J.V. Wood
Keyword(s):  
Thermal Spraying ◽  
Xrd Analysis ◽  
Powder Size ◽  
Coating Properties ◽  
X Ray Diffraction ◽  
Hvof Spraying ◽  
X Ray ◽  
Wear Rates ◽  
Powder Feedstock

Abstract In this paper, the production of NiCr-TiC powder by SHS, suitable for HVOF spraying, is discussed together with results on the microstructure and coating properties. Compacts for SHS were prepared by mixing elemental Ti and C with pre-alloyed Ni-20wt.% Cr powder to give an overall composition of 35wt.% NiCr and 65wt.% TiC. These were then ignited and a self-sustaining reaction proceeded to completion. Reacted compacts were crushed, sieved, and classified to give feedstock powders in size ranges of 10-45 µm and 45-75 µm. All powder was characterized prior to spraying based on particle size distribution, x-ray diffraction (XRD), and scanning electron microscopy (SEM/EDS). Thermal spraying was performed using both H2 and C3H6 as fuel gases in a UTP/Miller Thermal HVOF system. The resulting coatings were characterized by SEM and XRD analysis, and the microstructures correlated with powder size and spray conditions. Abrasive wear was determined by a modified 'dry sand rubber wheel' (DSRW) test and wear rates were measured. It has been found that wear rates comparable to those of HVOF sprayed WC-17wt% Co coatings can be achieved.

Research on ultra-smooth machining technique for monocrystalline silicon substrate

2020 ◽  
Vol 67 (14) ◽  
pp. 1227-1232
Author(s):  
Zhe Wang ◽  
Lingqi Wu ◽  
Aihuan Dun ◽  
Yuanyuan Fang ◽  
Li Song ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Monocrystalline Silicon

Effect of Antimony (Sb) Substitution on Ba-Site of Porous Structured YBA2Cu3Oδ Superconductor

2018 ◽  
Vol 7 (3.28) ◽  
pp. 106
Author(s):  
Fariesha Farha Ramli ◽  
Azhan Hashim
Keyword(s):  
Resistivity Measurement ◽  
Crystallographic Structure ◽  
Ybco Superconductor ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
Metallic Behavior ◽  
Sb Doping ◽  
Sem Micrograph ◽  
High Level

The effect of antimony (Sb) substitution on Ba-site of porous structure YBa2Cu3Oδ (YBCO) superconductor was investigated. Polycrystalline sucrose was used to create the open pores in the structure. A series of sample with a nominal composition of YBa2-xSbxCu3Oδ where x = 0.05, 0.10, 0.15, 0.20, 0.30, 0.40 and 0.50 were synthesized and characterized using X-ray diffraction (XRD) method, resistivity measurement technique and Scanning Electron Microscopic (SEM) equipment. For porous Sb-doped sample with x ≤ 0.30, the samples showed metallic behavior above onset critical temperature (TC onset) while semiconducting behavior was shown for x ³ 0.40. The optimum Sb concentration was achieved at x = 0.15, where TC zero is 85 K and critical current (JC) value measured at 70 K is 2.75 A/cm2. TC onset and TC zero of the sample were suppressed towards higher Sb concentration. High level of Sb concentration resulted in the non-superconducting sample and Sb was not incorporated properly into YBCO system. Generally, the crystallographic structure with 123 phase remains as orthorhombic. But, for Sb doping at x = 0.30, the sample exhibits tetragonal structure before the presence of 211 phase with the higher Sb concentration. SEM micrograph for porous sample showed the less dense packing with irregular grain shape compared to the standard sample where the small rounded particles grains that can be clearly seen. It can be summarized that the superconducting properties were attributed mainly by the dopants compared to the porous characteristic. 

Finite element analysis of resistivity measurement with van der Pauw method in a diamond anvil cell

2007 ◽  
Vol 90 (24) ◽  
pp. 242102 ◽  
Author(s):  
Xiaowei Huang ◽  
Chunxiao Gao ◽  
Yonghao Han ◽  
Ming Li ◽  
Chunyuan He ◽  
...  
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Diamond Anvil Cell ◽  
Resistivity Measurement ◽  
Element Analysis ◽  
Diamond Anvil ◽  
Van Der Pauw ◽  
Van Der Pauw Method
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