3.4L:Late-News Paper: Physical Model and Simulation Platform for High-Level Instability-Aware Design of Amorphous Oxide Semiconductor Thin-Film Transistors

SID Symposium Digest of Technical Papers ◽

10.1002/j.2168-0159.2012.tb05695.x ◽

2012 ◽

Vol 43 (1) ◽

pp. 11-14 ◽

Author(s):

Dae Hwan Kim ◽

Woojoon Kim ◽

Yongsik Kim ◽

Inseok Hur ◽

Minkyung Bae ◽

...

Keyword(s):

Thin Film ◽

Physical Model ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Simulation Platform ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Model And Simulation ◽

Semiconductor Thin Film ◽

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A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

Journal of Applied Physics ◽

10.1063/1.4895046 ◽

2014 ◽

Vol 116 (10) ◽

pp. 104502 ◽

Author(s):

Nianduan Lu ◽

Ling Li ◽

Pengxiao Sun ◽

Writam Banerjee ◽

Ming Liu

Keyword(s):

Thin Film ◽

Seebeck Coefficient ◽

Physical Model ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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Enhanced Phase Stability and Carrier Suppression of Ternary Cation-Based Amorphous Oxide Semiconductor Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2021-01511999mtgabs ◽

2021 ◽

Vol MA2021-01 (51) ◽

pp. 1999-1999

Author(s):

Mingyuan Liu ◽

Han Wook Song ◽

Sunghwan Lee

Keyword(s):

Thin Film ◽

Phase Stability ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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(Invited) Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective

ECS Transactions ◽

10.1149/05008.0151ecst ◽

2013 ◽

Vol 50 (8) ◽

pp. 151-159 ◽

Author(s):

M. Mativenga ◽

J. K. Um ◽

R. Mruthyunjaya ◽

J. H. Chang ◽

G. N. Heiler ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Length ◽

Channel Width ◽

Oxide Semiconductor ◽

Device Structure ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

AIP Advances ◽

10.1063/1.4742853 ◽

2012 ◽

Vol 2 (3) ◽

pp. 032129 ◽

Author(s):

Mallory Mativenga ◽

Tae-Ha Hwang ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film ◽

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15.1: Invited Paper: Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications

SID Symposium Digest of Technical Papers ◽

10.1889/1.3256701 ◽

2009 ◽

Vol 40 (1) ◽

pp. 181 ◽

Author(s):

John F. Wager

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3609254 ◽

2011 ◽

Vol 29 (4) ◽

pp. 04D115 ◽

Author(s):

T. Waggoner ◽

J. Triska ◽

K. Hoshino ◽

J. F. Wager ◽

J. F. Conley

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Zirconium Oxide ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure

Journal of the Korea Academia-Industrial cooperation Society ◽

10.5762/kais.2009.10.7.1489 ◽

2009 ◽

Vol 10 (7) ◽

pp. 1489-1496

Author(s):

Ho-Nyeon Lee

Keyword(s):

Thin Film ◽

Active Layer ◽

Thin Film Transistors ◽

Layer Structure ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

10.1117/12.2041028 ◽

2014 ◽

Author(s):

Robert Alston ◽

Shanthi Iyer ◽

Tanina Bradley ◽

Jay Lewis ◽

Garry Cunningham ◽

...

Keyword(s):

Thin Film ◽

Low Temperatures ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Flexible Electronic ◽

Deposition Parameters ◽

Semiconductor Thin Film

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Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective

ECS Meeting Abstracts ◽

10.1149/ma2012-02/42/3087 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Length ◽

Channel Width ◽

Oxide Semiconductor ◽

Device Structure ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film

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A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2018.02.004 ◽

2018 ◽

Vol 91 ◽

pp. 307-312 ◽

Author(s):

Fei Yu ◽

Chuanzhong Xu ◽

Gongyi Huang ◽

Wei Lin ◽

Tsair-Chun Liang

Keyword(s):

Thin Film ◽

Closed Form ◽

Thin Film Transistors ◽

Drain Current ◽

Compact Model ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Semiconductor Thin Film ◽

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