A simple fabrication method in the surface modification of electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO2) layer using thermal oxidation process. The process is aimed not only to improve the surface quality of the channel to be suitable for electroosmotic fluid transport but also to reduce the channel width using a simple technique. Initially, the parallel microchannel array with dimensions of 0.5 mm length and width ranging from 1.8 µm to 2 µm are created using plasma etching on the 2x2 cm <100> silicon substrate. The oxidation of silicon channel in a thermal chamber is then conducted to create the SiO2 layer. The layer properties and the quality of the surface are analyzed using SEM and surface profiler, respectively. The results show that the maximum oxidation growth rate occurs in the first 4 hours of oxidation time and the rate decreases by time as the oxide layer becomes thicker. It is also found that the surface roughness is reduced with the increase of process temperature and oxide thickness. The scallop effect on the vertical wall due to plasma etching process also improved with the presence of the oxide layer. After the oxidation, the channel width is reduced by ~40%. The demonstrated method is suggested for the fabrication of a uniform channel cross section with high aspect ratio in sub-micro and nanometer scale that will be useful for the electroosmotic flow (EOF) manipulation of the biomedical fluid sample.
Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation
