Cuprous sulfide deposition method for visualization of latent fingermarks on unfired cartridge cases

2020 ◽  
Vol 67 (8) ◽  
pp. 1415-1422
Author(s):  
Metodija Najdoski ◽  
Slobodan Oklevski ◽  
Sani Demiri ◽  
Sasho Stojkovikj
Keyword(s):  
Deposition Method ◽  
Cuprous Sulfide ◽  
Cartridge Cases

Electrochemical and photoelectrochemical water splitting with a CoOx catalyst prepared by flame assisted deposition

2020 ◽  
Vol 49 (3) ◽  
pp. 588-592 ◽  
Author(s):  
Fusheng Li ◽  
Ziqi Zhao ◽  
Hao Yang ◽  
Dinghua Zhou ◽  
Yilong Zhao ◽  
...  
Keyword(s):  
Cobalt Oxide ◽  
Water Splitting ◽  
Water Oxidation ◽  
Oxide Catalyst ◽  
Photoelectrochemical Water Splitting ◽  
Deposition Method ◽  
Photoelectrochemical Water Oxidation

A cobalt oxide catalyst prepared by a flame-assisted deposition method on the surface of FTO and hematite for electrochemical and photoelectrochemical water oxidation, respectively.

Anelastic Study of Nanocrystalline Gold Prepared by Gas Deposition Method

1996 ◽  
Vol 06 (C8) ◽  
pp. C8-199-C8-202
Author(s):  
H. Tanimoto ◽  
H. Mizubayashi ◽  
H. Fujita ◽  
S. Okuda
Keyword(s):  
Deposition Method

Preparation of Thin Films of TiO2 Nanoparticles using Electrophoresis Deposition Method

2009 ◽  
Vol 129 (9) ◽  
pp. 620-626
Author(s):  
Kazuatsu Ito ◽  
Yuuki Sato ◽  
Motonari Adachi ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Films ◽  
Tio2 Nanoparticles ◽  
Deposition Method ◽  
Electrophoresis Deposition

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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