Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH 3 SiCl 3 /H 2

2020 ◽  
Vol 52 (6) ◽  
pp. 359-367
Author(s):  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
Mitsuo Koshi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Phase Reaction

scholarly journals Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7532
Author(s):  
Botao Song ◽  
Bing Gao ◽  
Pengfei Han ◽  
Yue Yu ◽  
Xia Tang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Consumption Rate ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Flow Rate

Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, which were prepared from MTS-H2 gaseous system, were performed in this work by using the finite element method. The chemistry kinetic model of gas-phase reactions employed in this work was proposed by other researchers. The total gas flow rate, temperature, and ratio of MTS/H2 were the main process parameters in this work, and their effects on consumption rate of MTS, molar fraction of intermediate species and C/Si ratio inside the hot reaction chamber were analyzed in detail. The phenomena of our simulations are interesting. Both low total gas flow rate and high substrate temperature have obvious effectiveness on increasing the consumption rate of MTS. For all cases, the highest three C contained intermediates are CH4, C2H4 and C2H2, respectively, while the highest three Si/Cl contained intermediates are SiCl2, SiCl4 and HCl, respectively. Furthermore, low total gas flow results in a uniform C/Si ratio at different temperatures, and reducing the ratio of MTS/H2 is an interesting way to raise the C/Si ratio in the reactor.

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition

2017 ◽  
Vol 6 (7) ◽  
pp. P399-P404 ◽  
Author(s):  
Yuichi Funato ◽  
Noboru Sato ◽  
Yasuyuki Fukushima ◽  
Hidetoshi Sugiura ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Elementary Reaction ◽  
Reaction Models
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