scholarly journals In‐situ graphene alignment in self‐sealing stretchable films for efficient thermal interface materials

Nano Select ◽  
2020 ◽  
Author(s):  
Marialaura Clausi ◽  
Ilker S. Bayer
2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Chandan K. Roy ◽  
Sushil Bhavnani ◽  
Michael C. Hamilton ◽  
R. Wayne Johnson ◽  
Roy W. Knight ◽  
...  

This study investigates the reliability of low melt alloys (LMAs) containing gallium (Ga), indium (In), bismuth (Bi), and tin (Sn) for the application as Thermal interface materials (TIMs). The analysis described herein involved the in situ thermal performance of the LMAs as well as performance evaluation after accelerated life cycle testing, which included high temperature aging at 130 °C and thermal cycling from −40 °C to 80 °C. Three alloys (75.5Ga & 24.5In, 100Ga, and 51In, 32.5Bi & 16.5Sn) were chosen for testing the thermal performance. Testing methodologies used follow ASTM D5470 protocols and the performance of LMAs is compared with some high-performing commercially available TIMs. Results show that LMAs can offer extremely low (<0.01 cm2 °C/W) thermal resistance compared to any commercial TIMs. The LMA–substrate interactions were explored using different surface treatments (copper and tungsten). Measurements show that depending on the substrate–alloy combinations, the proposed alloys survive 1500 hrs of aging at 130 °C and 1000 cycles from −40 °C to 80 °C without significant performance degradation. The obtained results indicate the LMAs are very efficient as TIMs.


2012 ◽  
Vol 43 (9) ◽  
pp. 661-668 ◽  
Author(s):  
András Vass-Várnai ◽  
Zoltán Sárkány ◽  
Márta Rencz

Author(s):  
I. Savija ◽  
J. R. Culham ◽  
M. M. Yovanovich

The conductivity of thermal interface materials are typically determined using procedures detailed in ASTM D 5470. The disadvantages of using these existing procedures for compliant materials are discussed along with a proposed new procedure for determining thermal conductivity and Young’s modulus. The new procedure, denoted as the Bulk Resistance Method, is based on experimentally determined thermal resistance data and an analytical model for thermal resistance in joints incorporating thermal interface materials. Two versions of the model are presented, the Simple Bulk Resistance Model, based on the interface material thickness prior to loading and a more precise version denoted as the General Bulk Resistance Model, that includes additional parameters such as surface characteristics and thermophysical properties of the contacting solids. Both methods can be used to predict material in situ thickness as a function of load.


2012 ◽  
Vol 2012 (DPC) ◽  
pp. 000655-000683
Author(s):  
Victor Papanu

Developments in thermal interface materials (TIMs) continue across the industry with a variety of different types of materials. Thermal and mechanical design engineers are often confronted with the need to select which type or category of TIM material is the most appropriate for a specific LED module application, which can be confusing, and how to determine which materials provide the best thermal performance. The next step is understanding which TIM material types meet requirements for ease of shipping, handling, placement, cost, and rework. These are important distinctions, in addition to thermal performance. This presentation will illustrate comparative testing results for a set of thermal interface materials (TIMs) in different categories, using different TIM testing procedures. Test data prepared using three different test methods will be compared:1. ASTM D5470-06 with known temperatures and clamping forces;2. In-situ testing with industry-standard semiconductor modules, at known temperatures and estimated clamping forces;3. In-situ testing utilizing a thermal test vehicle (TTV) for TIM2 performance for a processor module. In-situ testing has been performed at an independent power semiconductor manufacturer, using both industry-standard and commonly-available modules and a custom-designed module with a relatively small footprint, capable of high operating junction temperatures. This testing data can illustrate how different types of TIM materials perform in laboratory testing conditions, for precise comparisons on thermal performance alone; and how different types of materials perform in what are termed as “in-situ” test procedures. This term is used for application-specific conditions, where additional variables are encountered in the testing (such as non-flat surface conditions and unknown clamping force values), which is significantly different from the laboratory conditions used to generate ASTM D-5470 test values. The comparative testing that has been undertaken will be described, showing that images of various power semiconductors with several different materials tend to correlate with the thermal resistance of materials measured with the ASTM D 5470-06 method. These thermal interface materials were also tested on a TTV supplied by a major processor module. The relevance of the thermal imaging, the TTV and the ASTM values will be discussed. This presentation is intended to illustrate the differences in experimental data from one TIM material to another, as well as the differences in testing procedures.


Author(s):  
Chandan K. Roy ◽  
Daniel K. Harris ◽  
Sushil Bhavnani ◽  
Michael C. Hamilton ◽  
Wayne Johnson ◽  
...  

This paper focuses on developing a reliable thermal interface material (TIM) using low melt alloys (LMAs) containing gallium (Ga), indium (In), bismuth (Bi), and tin (Sn). The investigation described herein involved the in situ thermal performance of the LMAs as well as performance evaluation after accelerated life cycle testing, which included isothermal aging at 130°C and thermal cycling from −40°C to 80°C. Three alloys (75.5Ga &24.5In, 100Ga, and 51In, 32.5Bi &16.5Sn) were chosen for testing the thermal performance. Testing methodologies used follow ASTM D5470 protocols and the results are compared with some commercially available TIMs. The LMAs-substrate interaction was investigated by applying the alloys using different surface treatments (copper and tungsten). Measurements show that the alloys did survive extended aging and cycling depending upon the substrate-alloy combinations.


Author(s):  
Peng Li ◽  
Alfred La Mar ◽  
Yongmei Liu ◽  
Deepak Goyal

Abstract Innovative in situ X-ray metrologies for package failure analysis (FA) were developed to understand solder thermal interface materials (STIM) package process and failure mechanisms through elevated temperature. Dynamic STIM void formation mechanism and STIM bleeding-out dependency on reflow were observed. It was found that long sit time before STIM liquidus temperature helps to minimize the STIM void formation and fast cooling mitigates the STIM bleed-out risk. Our studies demonstrate that in situ metrologies offer direct guidance to packaging process optimization and accelerate root-cause identification for temperature induced package failures; therefore, it improves throughput-time for packaging technology development.


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