Quantification of Phenylpropanoids in Commercial Echinacea Products Using TLC with Video Densitometry as Detection Technique and ANN for Data Modelling

2012 ◽  
Vol 24 (4) ◽  
pp. 303-308 ◽  
Author(s):  
S. Agatonovic-Kustrin ◽  
Christine M. Loescher ◽  
Ragini Singh



1978 ◽  
Vol 17 (04) ◽  
pp. 161-171
Author(s):  
H.-J. Engel ◽  
H. Hundeshagen ◽  
P. R. Lichtlen

Methodological and technical aspects as well as application and results of the precordial Xenon-residue-detection technique are critically reviewed. The results concern mainly normal flow in various regions of the heart esp. in the free wall of the right and left ventricle, poststenotic flow in patients with coronary artery disease in relation to the degree of proximal nar-rowings as well as wall motion of the corresponding LV segment, bypassgraft flow and flow after drug interventions esp. nitrates, betablockers, the calcium-antagonist Nifedipine and the coronary dilator Dipyridamole. In spite of its serious limitations (high affinity of Xenon for fatty tissue, geometrical problems in the assessment of flow and its relation to anatomy, gas exchange in situations of high flow etc.), the technique is found to be a usefull investigatory tool. Due to its technical display and the related high costs routine application is, however, prohibitive.



2012 ◽  
Vol 2 (9) ◽  
pp. 148-150 ◽  
Author(s):  
Marriboyina Rajendra ◽  
◽  
S. Suresh Babu


2013 ◽  
Vol 133 (6) ◽  
pp. 1145-1152
Author(s):  
Kohei Ohno ◽  
Makoto Itami ◽  
Tetsushi Ikegami








Author(s):  
Fred Y. Chang ◽  
Victer Chan

Abstract This paper describes a novel de-process flow by combining cobalt silicide / nitride wet etch with KOH electrochemical wet etch (ECW) to identify leaky gate in silicided deep sub-micron process technology. Traditionally, leaky gate identification requires direct confirmation by gate level electrical or emission detection technique. Ohtani [1] used KOH electrochemical etch application to identify nonsilicided leaky gate capacitor in DRAM without using the above confirmation. The result of the case study demonstrates the expanded application of ECW etch to both silicided 0.18um logic and SRAM devices. Voltage contrast at metal 1 to assist leaky gate localization is also proposed. By combining both techniques, the possibility for isolating gate related defects are greatly enhanced. Case studies also show the advantages of the proposed technique over conventional poly level voltage contrast in leaky gate identification especially with devices that use local interconnect and nitride liner process.





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