Thermoelectric properties of p-type higher manganese silicide films prepared by solid phase reaction and reactive deposition

2007 ◽  
Vol 204 (10) ◽  
pp. 3429-3437 ◽  
Author(s):  
Q. R. Hou ◽  
W. Zhao ◽  
Y. B. Chen ◽  
D. Liang ◽  
X. Feng ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Higher Manganese Silicide ◽  
Reactive Deposition ◽  
Manganese Silicide ◽  
P Type

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

Preparation and Thermoelectric Properties of Bi Doped Ca3Co4O9 Based Thermoelectric Materials

2018 ◽  
Vol 783 ◽  
pp. 144-147
Author(s):  
Jing Wang ◽  
Qin Chen ◽  
Xia Chun Zhu ◽  
Seok Je Lee ◽  
Kyoung Woo Park ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Sintering Process ◽  
Spin Entropy ◽  
Plasma Sintering ◽  
Spark Plasma

Polycrystalline Ca3-xBixCo4O9 samples have been prepared by solid-phase reaction followed by spark plasma sintering process. The thermoelectric properties have been systematically investigated from room temperature to near 1000K. It is found that the change of the carrier concentration leads to the change of resistivity, which is mainly associated with doping induced point defect phonon scattering. The change of the thermal potential mainly comes from the spin entropy. In addition, polycrystalline Ca3-xBixCo4O9 had a maximum figure of merit of 0.30 at 973 K, which was about 50% higher than Ca3Co4O9. It indicated that doping approach can effectively improve the thermoelectric performance of Ca3Co4O9+δ-based material.

Preparation of manganese silicide thin films by solid phase reaction

1997 ◽  
Vol 113-114 ◽  
pp. 53-56 ◽  
Author(s):  
Jinliang Wang ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Manganese Silicide

Thermoelectric properties of p-type Si-rich higher manganese silicide for mid-temperature applications

2021 ◽  
pp. 130444
Author(s):  
Madhuvathani Saminathan ◽  
Jothilal Palraj ◽  
Prince Wesley ◽  
Manojkumar Moorthy ◽  
Ravikirana ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Higher Manganese Silicide ◽  
Manganese Silicide ◽  
P Type ◽  
Temperature Applications

Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

1999 ◽  
Vol 580 ◽  
Author(s):  
C.C. Theron ◽  
A. Falepin ◽  
S. Degroote ◽  
J. Dekoster ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Phase Formation ◽  
Diffusion Barrier ◽  
Solid Phase ◽  
Direct Reaction ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Annealing Temperatures ◽  
Direct Formation

AbstractBy analogy to reactive deposition epitaxy and titanium interlayer mediated epitaxy experiments, an attempt has been made to constrain the supply of reactants to the reaction interface in the solid phase reaction between Fe and Si. The goal being to change the normal phase formation sequence by using a suitable diffusion barrier, so that β-FeSi2 forms directly. Both Fe-V and Fe-Zr diffusion barriers were used to constrain the supply of the two reactants during Fe-silicide formation. Measurements with these barriers, show first phase formation of β-FeSi2, but direct formation of 3-FeSi2 as first phase has not been observed. In the case of the Fe-V diffusion barrier it was shown that the use of the diffusion barrier resulted in smoother layers of β-FeSi2 than could be formed by direct reaction of Fe on Si. In the case of the Fe-Zr barrier it is found that the barrier fails structurally at high temperatures. While it does prohibit Fe diffusion at low annealing temperatures, significant Si diffusion occurs prior to ε-FeSi formation.

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