Preparation of manganese silicide thin films by solid phase reaction

1997 ◽  
Vol 113-114 ◽  
pp. 53-56 ◽  
Author(s):  
Jinliang Wang ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Manganese Silicide

scholarly journals Структурные фазовые превращения при твердофазной реакции в тонких двухслойных пленках Al/Pt

2018 ◽  
Vol 60 (7) ◽  
pp. 1397
Author(s):  
Р.Р. Алтунин ◽  
Е.Т. Моисеенко ◽  
С.М. Жарков
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Phase Transformations ◽  
Solid Phase ◽  
Structural Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Formation Heat ◽  
Structural Phase Transformations

AbstractA sequence of phases forming during the solid-phase reaction in Al/Pt bilayer thin films has been investigated by in situ electron diffraction. It is shown that the amorphous PtAl_2 phase forms first during the solid-phase reaction initiated by heating. Upon further heating, PtAl_2, Pt_2Al_3, PtAl, and Pt_3Al crystalline phases sequentially form, which is qualitatively consistent with an effective formation heat model. The content of phases forming during the reaction has been quantitatively analyzed and the structural phase transformations have been examined.

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

Formation of Superconducting Y-Ba-Cu-O Thin Films by the Solid Phase Reaction between BaCo3/Cu/Y2O3Layers on Single Crystalline SrTiO3Substrate

1987 ◽  
Vol 26 (Part 2, No. 9) ◽  
pp. L1451-L1452 ◽  
Author(s):  
Yoshio Sorimachi ◽  
Akihito Kobayashi ◽  
Tsutomu Yamashita ◽  
Masasuke Takata ◽  
Shinnosuke Miyauchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Single Crystalline

Solid phase reaction of molybdenum‐nickel alloy thin films with silicon

1990 ◽  
Vol 67 (10) ◽  
pp. 6269-6273
Author(s):  
R. S. Rastogi ◽  
V. D. Vankar ◽  
K. L. Chopra
Keyword(s):  
Thin Films ◽  
Nickel Alloy ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction

Characterization of Zirconium Germanosilicide Formed by Solid State Reaction of ZR With Sil−xGex Alloys

1995 ◽  
Vol 402 ◽  
Author(s):  
Z. Wang ◽  
D. B. Aldrich ◽  
P. Goeller ◽  
R. J. Nemanich ◽  
D. E. Sayers
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Sheet Resistance ◽  
Solid State Reaction ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Final Phase ◽  
The Stability

AbstractWe have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Sil−xGex solid state reaction. Thin films of C49 Zr(Si1−xGex)2 were formed from the solid phase reaction of Zr and Si1−xGex bilayer structures. It was observed that Zr reacts uniformly with the Sil−xGex alloy and that C49 Zr(Si1−x Gex)2 is the final phase of the Zr-Si1−xGex, solid phase reaction (such tht y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1−xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Sil−x Gex)2 in contact with Si1−Gex was investigated and no germanium segregation was detected in the Zr(Si1−xGex)2/Si1−Gex structures.

X-ray investigation of Ti-Si thin films prepared by solid phase reaction

1986 ◽  
Vol 137 (2) ◽  
pp. 243-249 ◽  
Author(s):  
E. Zsoldos ◽  
G. Petõ ◽  
V. Schiller ◽  
G. Vályi
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
X Ray
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