Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2 /O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates

2014 ◽  
Vol 211 (10) ◽  
pp. 2264-2267 ◽  
Author(s):  
J. Achard ◽  
A. Tallaire ◽  
V. Mille ◽  
M. Naamoun ◽  
O. Brinza ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Plasma Etching ◽  
Diamond Films ◽  
Single Crystal Diamond ◽  
O2 Plasma

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

2014 ◽  
Vol 104 (25) ◽  
pp. 252109 ◽  
Author(s):  
Yoshiaki Mokuno ◽  
Yukako Kato ◽  
Nobuteru Tsubouchi ◽  
Akiyoshi Chayahara ◽  
Hideaki Yamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Free Standing ◽  
Nitrogen Doped ◽  
Diamond Plate ◽  
Low Dislocation Density ◽  
Single Crystal Diamond ◽  
Lift Off

Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

2021 ◽  
Vol 36 (6) ◽  
pp. 1034-1045
Author(s):  
Wei-hua Wang ◽  
Yang Wang ◽  
Guo-yang Shu ◽  
Shi-shu Fang ◽  
Jie-cai Han ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Recent Progress ◽  
Diamond Growth ◽  
Single Crystal Diamond ◽  
And Behavior

Morphologic study of (100) single crystal diamond films epitaxially grown by chemical vapor deposition

1993 ◽  
Vol 132 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Z.M. Zhang ◽  
H.M. Cheng ◽  
S.H. Li ◽  
Q.Y. Cai ◽  
D.L. Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Morphologic Study ◽  
Single Crystal Diamond

Coherent Phonon-Mode Excitation in Submicron Single-Crystal Diamond Films with a Graphitized Layer Built-In

2017 ◽  
Vol 38 (6) ◽  
pp. 530-538 ◽  
Author(s):  
M. V. Tareeva ◽  
V. A. Dravin ◽  
R. A. Khmelnitsky ◽  
A. D. Kudryavtseva ◽  
M. A. Strokov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Phonon Mode ◽  
Diamond Films ◽  
Coherent Phonon ◽  
Single Crystal Diamond ◽  
Mode Excitation
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