Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal (Phys. Status Solidi A 20∕2018)
2018 ◽
Vol 215
(20)
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pp. 1701017
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1986 ◽
Vol 78
(3)
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pp. 567-570
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2010 ◽
Vol 49
(9)
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pp. 09MC06
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2002 ◽
Vol 237-239
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pp. 778-782
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