Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal

2018 ◽  
Vol 924 ◽  
pp. 47-50
Author(s):  
Young Gon Kim ◽  
Su Hun Choi ◽  
Yun Ji Shin ◽  
Seong Min Jeong ◽  
Myung Hyun Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Gradient ◽  
Solution Growth ◽  
Cross Sectional ◽  
Dissolved Carbon ◽  
Simulation Results ◽  
Stable Growth ◽  
Top Seeded Solution Growth ◽  
Numerical Approaches

The modified crucible in the top seeded solution growth (TSSG) method was proposed to get the stable growth condition and the enhanced growth rate. The temperature gradient and the distribution of dissolved carbon in the solvent were obtained by numerical approaches. Compared simulation results and experiment, we investigated the region where is the most of dissolved carbon and it is supplied to the seed through what path. The cross-sectional samples of crucibles and grown SiC crystals were systematically analyzed to investigate the effect of the crucible modification on SiC crystal growth.

scholarly journals Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 651
Author(s):  
Minh-Tan Ha ◽  
Le Van Lich ◽  
Yun-Ji Shin ◽  
Si-Young Bae ◽  
Myung-Hyun Lee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Fluid Flow ◽  
Crystal Growth ◽  
Static Magnetic Field ◽  
Crystal Surface ◽  
Solution Growth ◽  
Helmholtz Coils ◽  
External Static Magnetic Field ◽  
Top Seeded Solution Growth

Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal.

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

2012 ◽  
Vol 717-720 ◽  
pp. 61-64 ◽  
Author(s):  
Hironori Daikoku ◽  
M. Kado ◽  
H. Sakamoto ◽  
Hiroshi Suzuki ◽  
T. Bessho ◽  
...  
Keyword(s):  
Growth Rate ◽  
Seed Crystal ◽  
Solution Growth ◽  
Bulk Crystals ◽  
High Quality ◽  
Cross Sectional ◽  
Formation Technique ◽  
Top Seeded Solution Growth ◽  
Microscopy Images

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from −22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

scholarly journals Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

RSC Advances ◽  
2019 ◽  
Vol 9 (45) ◽  
pp. 26327-26337 ◽  
Author(s):  
Minh-Tan Ha ◽  
Yeong-Jae Yu ◽  
Yun-Ji Shin ◽  
Si-Young Bae ◽  
Myung-Hyun Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Solution Growth ◽  
Multiphysics Simulation ◽  
Flow Modification ◽  
Top Seeded Solution Growth ◽  
Flow Modifier

Based on the verified multiphysics simulation, a model describing C transport contributing to crystal growth was suggested. Based on the further understanding of C transport, the growth rate was enhanced by adopting a flow modifier in the melt.

scholarly journals Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal (Phys. Status Solidi A 20∕2018)

2018 ◽  
Vol 215 (20) ◽  
pp. 1870045
Author(s):  
Minh-Tan Ha ◽  
Yun-Ji Shin ◽  
Myung-Hyun Lee ◽  
Cheol-Jin Kim ◽  
Seong-Min Jeong
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Top Seeded Solution Growth

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

scholarly journals Use of Growth-Rate/Temperature-Gradient Charts for Defect Engineering in Crystal Growth from the Melt

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 909
Author(s):  
Thierry Duffar
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Gradient ◽  
Growth Conditions ◽  
Industrial Applications ◽  
Physical Models ◽  
Production Yield ◽  
Defect Engineering ◽  
Pedagogic Tool ◽  
Simple Growth

As the requirements in terms of crystal defect/quality and production yield are generally contradictory, it is necessary to develop methods in order to find the best compromise for the growth conditions of a given crystal. Simple growth-rate/temperature-gradient charts are a possible tool in this respect. After the recall of the classical analytical equations useful for describing the process and defect engineering, a simple pedagogic case explains the building and use of such charts. The more complex application to the directional casting of photovoltaic Si necessitated the development of new physical models for twinning and equiaxed growth. This allowed plotting charts that proved useful for industrial applications. The conclusions discuss the drawbacks and advantages of the method. It finally proves to be a pedagogic tool for teaching crystal growth engineering.

Crystal growth, structure and optical properties of a new acentric crystal La2Al4.68B8O22 with a short UV absorption edge

2016 ◽  
Vol 40 (6) ◽  
pp. 4870-4873 ◽  
Author(s):  
Shu Guo ◽  
Lijuan Liu ◽  
Mingjun Xia ◽  
Xiaoyang Wang ◽  
Lei Bai ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystal Growth ◽  
Absorption Edge ◽  
Uv Absorption ◽  
Solution Growth ◽  
Growth Structure ◽  
Growth Method ◽  
193 Nm ◽  
Top Seeded Solution Growth

A new acentric borate La2Al4.68B8O22 crystal, grown using the top seeded solution growth method, shows a short absorption edge at 193 nm.

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