Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth

2020 ◽  
Vol 533 ◽  
pp. 125406
Author(s):  
Botao Liu ◽  
Yue Yu ◽  
Xia Tang ◽  
Bing Gao
Keyword(s):  
Silicon Carbide ◽  
Solution Growth ◽  
Heating Model ◽  
Top Seeded Solution Growth

scholarly journals Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 653 ◽  
Author(s):  
Botao Liu ◽  
Yue Yu ◽  
Xia Tang ◽  
Bing Gao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Flow Field ◽  
Industrial Production ◽  
Solution Growth ◽  
Interface Instability ◽  
Growth Interface ◽  
Interface Stability ◽  
Large Size ◽  
Top Seeded Solution Growth

The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future.

The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

2019 ◽  
Vol 54 (5) ◽  
pp. 1900014 ◽  
Author(s):  
Takashi Horiuchi ◽  
Lei Wang ◽  
Atsushi Sekimoto ◽  
Yasunori Okano ◽  
Takuya Yamamoto ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Solution Growth ◽  
Crystal Silicon ◽  
Crucible Rotation ◽  
Top Seeded Solution Growth

YMgB5O10 crystal preparation and attractive multi-wavelength emission characteristics of doping Nd3+ ions

2021 ◽  
Author(s):  
Shijia Sun ◽  
Qi Wei ◽  
Bing-Xuan Li ◽  
Xingjun Shi ◽  
feifei yuan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transmission Spectrum ◽  
Systematic Investigation ◽  
Solution Growth ◽  
Emission Characteristics ◽  
Multi Wavelength ◽  
Growth Method ◽  
Wavelength Emission ◽  
Spectrum Band ◽  
Top Seeded Solution Growth

The pure and Nd3+-doped YMgB5O10 (YMB, Nd:YMB) crystals were grown successfully by the top-seeded solution growth method with composite fluxes Li2O-B2O3-LiF. The systematic investigation of crystal structure, transmission spectrum, band...

Growth of Ti alloyed Nb3Sn crystals from Sn-Ti-Nb solutions by top seeded solution growth

1986 ◽  
Vol 78 (3) ◽  
pp. 567-570 ◽  
Author(s):  
T. Inoue ◽  
H. Komatsu ◽  
M. Shimizu ◽  
S. Tsunekawa ◽  
H. Takei
Keyword(s):  
Solution Growth ◽  
Top Seeded Solution Growth

scholarly journals Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal (Phys. Status Solidi A 20∕2018)

2018 ◽  
Vol 215 (20) ◽  
pp. 1870045
Author(s):  
Minh-Tan Ha ◽  
Yun-Ji Shin ◽  
Myung-Hyun Lee ◽  
Cheol-Jin Kim ◽  
Seong-Min Jeong
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Top Seeded Solution Growth

scholarly journals Relaxor-based ferroelectric single crystals grown by top-seeded solution growth method

2017 ◽  
Vol 47 (11) ◽  
pp. 1126-1138
Author(s):  
Chao HE ◽  
ZuJian WANG ◽  
XiaoMing YANG ◽  
XiFa LONG
Keyword(s):  
Single Crystals ◽  
Solution Growth ◽  
Growth Method ◽  
Top Seeded Solution Growth

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds

2015 ◽  
Vol 821-823 ◽  
pp. 31-34 ◽  
Author(s):  
Tomonori Umezaki ◽  
Daiki Koike ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Flow Direction ◽  
Seed Crystal ◽  
Solution Growth ◽  
Rotational Axis ◽  
Solution Flow ◽  
Step Flow ◽  
Unidirectional Flow ◽  
Novel Method ◽  
Set Up ◽  
Top Seeded Solution Growth

The solution growth of SiC on an off-axis seed is effective on the reduction of threading dislocations. We proposed a novel method to grow a SiC crystal on an off-axis seed by top-seeded solution growth (TSSG). In our previous study, a unidirectional solution flow above a seed crystal is effective to suppress surface roughness in the growth on the off-axis seed. However, it is difficult to apply the unidirectional flow in an axisymmetric TSSG set-up. In this study, the unidirectional flow could be achieved by shifting the rotational axis away from the center of the seed crystal. As a result, the smooth surface was obtained in the wider area where the solution flow direction was opposite to the step-flow direction.

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