Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

physica status solidi (a) ◽

10.1002/pssa.202170016 ◽

2021 ◽

Vol 218 (3) ◽

pp. 2170016

Author(s):

Shaoyu Sun ◽

Jianshan Zhang ◽

Ling Xia ◽

Wengang Wu ◽

Jinyan Wang ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transfer System ◽

Wireless Power ◽

High Electron Mobility ◽

Waveform Distortion ◽

Wireless Power Transfer System ◽

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Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

physica status solidi (a) ◽

10.1002/pssa.202000565 ◽

2020 ◽

pp. 2000565

Author(s):

Shaoyu Sun ◽

Jianshan Zhang ◽

Ling Xia ◽

Wengang Wu ◽

Jinyan Wang ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transfer System ◽

Wireless Power ◽

High Electron Mobility ◽

Waveform Distortion ◽

Wireless Power Transfer System ◽

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Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

2019 International Conference on Advanced Technologies for Communications (ATC) ◽

10.1109/atc.2019.8924506 ◽

2019 ◽

Author(s):

Dao Dinh Ha ◽

Trung Tran Tuan ◽

Vladislav Volcheck ◽

Viktor Stempitsky

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Thermal Simulation ◽

High Electron ◽

High Electron Mobility

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Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Journal of Diabetes Science and Technology ◽

10.1177/193229681000400122 ◽

2010 ◽

Vol 4 (1) ◽

pp. 171-179 ◽

Author(s):

Byung Hwan Chu ◽

Byoung Sam Kang ◽

Sheng Chun Hung ◽

Ke Hung Chen ◽

Fan Ren ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Aluminum Gallium Nitride ◽

Exhaled Breath Condensate ◽

High Electron Mobility Transistor ◽

Glucose Detection ◽

Exhaled Breath ◽

High Electron ◽

High Electron Mobility ◽

Breath Condensate

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Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

physica status solidi (a) ◽

10.1002/pssa.201900717 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900717

Author(s):

Chunlei Wu ◽

Hansheng Ye ◽

Benjamin Grisafe ◽

Suman Datta ◽

Patrick Fay

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Polarization Switching ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

High Electron ◽

High Electron Mobility

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High-selectivity dry etching for p-type GaN gate formation of normally-off operation high-electron-mobility transistor

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abb759 ◽

2020 ◽

Vol 60 (SA) ◽

pp. SAAD01

Author(s):

Naotaka Iwata ◽

Takaaki Kondo

Keyword(s):

Electron Mobility ◽

High Selectivity ◽

High Electron Mobility Transistor ◽

Dry Etching ◽

High Electron ◽

High Electron Mobility ◽

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe2df ◽

2021 ◽

Vol 36 (4) ◽

pp. 045019

Author(s):

Samriddhi Raut ◽

Khushwant Sehra ◽

Meena Mishra ◽

D S Rawal ◽

Mridula Gupta ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Frequency Power

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Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3141 ◽

2021 ◽

Author(s):

Kai‐Jun Pai ◽

Chang‐Hua Lin

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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Mechanism of wireless power transfer system waveform distortion caused by nonideal gallium nitride transistor characteristics

Chinese Journal of Electrical Engineering ◽

10.23919/cjee.2021.000016 ◽

2021 ◽

Vol 7 (2) ◽

pp. 61-69

Author(s):

Shaoyu Sun ◽

Jianshan Zhang ◽

Wengang Wu ◽

Ling Xia ◽

Yufeng Jin

Keyword(s):

Gallium Nitride ◽

Wireless Power Transfer ◽

Transfer System ◽

Power Transfer ◽

Wireless Power ◽

Waveform Distortion ◽

Wireless Power Transfer System

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

IET Circuits Devices & Systems ◽

10.1049/cds2.12075 ◽

2021 ◽

Author(s):

Khizar Hayat ◽

Salahuddin Zafar ◽

Tariq Mehmood ◽

Busra Cankaya Akoglu ◽

Ekmel Ozbay ◽

...

Keyword(s):

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Radar Applications ◽

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Design and fabrication of high electron mobility transistor devices with gallium nitride-based

Acta Physica Sinica ◽

10.7498/aps.66.247203 ◽

2017 ◽

Vol 66 (24) ◽

pp. 247203

Author(s):

Zhu Yan-Xu ◽

Song Hui-Hui ◽

Wang Yue-Hua ◽

Li Lai-Long ◽

Shi Dong

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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