Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure

physica status solidi (c) ◽

10.1002/pssc.200881507 ◽

2009 ◽

Vol 6 (6) ◽

pp. 1513-1516

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Takayuki Hasegawa ◽

Masaaki Nakayama

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Layer Structure ◽

Intense Emission ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Enhancement of terahertz electromagnetic wave emission from an undoped GaAs∕n-type GaAs epitaxial layer structure

Applied Physics Letters ◽

10.1063/1.2976436 ◽

2008 ◽

Vol 93 (8) ◽

pp. 081916 ◽

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Takayuki Hasegawa ◽

Masaaki Nakayama

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Layer Structure ◽

Wave Emission ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Journal of Luminescence ◽

10.1016/j.jlumin.2010.09.022 ◽

2011 ◽

Vol 131 (3) ◽

pp. 531-534

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Carrier Transport ◽

Transport Processes ◽

Layer Structures ◽

Frequency Tunable ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.082001 ◽

2010 ◽

Vol 49 (8) ◽

pp. 082001 ◽

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Syuuichi Tsuruta ◽

Hisashi Yamada ◽

Masahiko Hata ◽

...

Keyword(s):

Frequency Shift ◽

Epitaxial Layer ◽

Electromagnetic Waves ◽

Carrier Transport ◽

Layer Structures ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures

physica status solidi (c) ◽

10.1002/pssc.201000396 ◽

2010 ◽

Vol 8 (2) ◽

pp. 343-345 ◽

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Epitaxial Layer ◽

Longitudinal Optical ◽

Optical Phonons ◽

Terahertz Emission ◽

Simple Strategy ◽

Layer Structures ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

Physics Procedia ◽

10.1016/j.phpro.2012.03.687 ◽

2012 ◽

Vol 29 ◽

pp. 30-35

Author(s):

H. Takeuchi ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

M. Nakayama

Keyword(s):

Fourier Transform ◽

Time Evolution ◽

Epitaxial Layer ◽

Electromagnetic Waves ◽

Transform Method ◽

Fourier Transform Method ◽

Layer Structures ◽

Time Partitioning ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3126270 ◽

2021 ◽

pp. 1-8

Author(s):

Yuji Ando ◽

Ryutaro Makisako ◽

Hidemasa Takahashi ◽

Akio Wakejima ◽

Jun Suda

Keyword(s):

Epitaxial Layer ◽

Layer Structure ◽

Electrical Characteristics ◽

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Evaluation of an epitaxial layer structure by lateral force and contact current measurements in a scanning force microscope

Microelectronic Engineering ◽

10.1016/0167-9317(94)90059-0 ◽

1994 ◽

Vol 24 (1-4) ◽

pp. 99-106 ◽

Author(s):

M. Maywald ◽

R.E. Stephan ◽

L.J. Balk

Keyword(s):

Epitaxial Layer ◽

Layer Structure ◽

Lateral Force ◽

Scanning Force Microscope ◽

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Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00707-3 ◽

2001 ◽

Vol 86 (3) ◽

pp. 228-231 ◽

Author(s):

R. Singh ◽

S.K. Arora ◽

J.P. Singh ◽

Renu Tyagi ◽

S.K. Agarwal ◽

...

Keyword(s):

Experimental Investigation ◽

Epitaxial Layer ◽

Hall Measurements ◽

Gaas Epitaxial Layer

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Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine

Journal of The Electrochemical Society ◽

10.1149/1.2133040 ◽

1976 ◽

Vol 123 (8) ◽

pp. 1227-1231 ◽

Author(s):

Yoshiro Nakayama ◽

Shinji Ohkawa ◽

Hisao Hashimoto ◽

Hajime Ishikawa

Keyword(s):

Epitaxial Layer ◽

Gaas Epitaxial Layer

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Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.366841 ◽

1998 ◽

Vol 83 (3) ◽

pp. 1384-1389 ◽

Author(s):

H. Nakano ◽

T. Sakamoto ◽

K. Taniguchi

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Spectroscopic Ellipsometry ◽

Nondestructive Measurement ◽

Infrared Spectroscopic ◽

Measurement Of Thickness ◽

Gaas Epitaxial Layer

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