In the past year, several organizations have fabricated reliable, high-brightness LEDs from III-Nitride materials that emit in the blue and green. Recently, Nichia in Japan have announced lasing action in GaN-based diodes. Quantum well structures are key to all these results, offering higher brightness, narrower EL linewidths, and a wider spectral range. In order for the III-Nitride technology to develop, the material growth technique must offer high volume at low cost in addition to the requisite device performance. To date, only MOVPE has demonstrated this capability. We have previously reported the growth of GaN, InGaN, and AlGaN layers by MOVPE in a multi-wafer, high-speed rotating disk reactor. Both n- and p-doping and high quality optical properties have been achieved. In this paper we extend this earlier work and present results of the performance of InGaN / (Al)GaN quantum well structures. Intense PL spectra were observed in the violet and blue regions. The thinnest wells show evidence from PL and DCXRD measurments of either discontinuous layers (islands) or a diffuse upper interface, with preliminary TEM results showing the latter to be the most likely. We also report excellent uniformity of these quantum well structures, and show electroluminescence from a SQW diode emitting at 473 nm.
