Spatial distribution of free carrier concentration in vertical GaN Gunn-diode structures studied by confocal micro-Raman spectroscopy and Kelvin probe force microscopy

2014 ◽  
Vol 11 (2) ◽  
pp. 269-273 ◽  
Author(s):  
V. V. Strelchuk ◽  
A. S. Nikolenko ◽  
P. M. Lytvyn ◽  
A. S. Romanyuk ◽  
Yu. I. Mazur ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Distribution ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Gunn Diode ◽  
Kelvin Probe Force Microscopy ◽  
Free Carrier Concentration ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy

Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy

2013 ◽  
Vol 10 (7-8) ◽  
pp. 1172-1175 ◽  
Author(s):  
A. N. Nazarov ◽  
S. O. Gordienko ◽  
P. M. Lytvyn ◽  
V. V. Strelchuk ◽  
A. S. Nikolenko ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy

Raman Spectroscopy and Kelvin Probe Force Microscopy characteristics of the CVD suspended graphene

2016 ◽  
Vol 64 ◽  
pp. 27-33 ◽  
Author(s):  
Krzysztof Gajewski ◽  
Stefan Goniszewski ◽  
Anna Szumska ◽  
Magdalena Moczaɫa ◽  
Piotr Kunicki ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Suspended Graphene ◽  
Force Microscopy

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

2014 ◽  
Vol 778-780 ◽  
pp. 394-397 ◽  
Author(s):  
Yun Ji Shin ◽  
Soo In Kim ◽  
Hyeon Jin Jung ◽  
Chang Woo Lee ◽  
Wook Bahng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Crystallographic Structure ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

scholarly journals The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

2007 ◽  
Vol 307 (2) ◽  
pp. 298-301 ◽  
Author(s):  
R. Lewandowska ◽  
J.L. Weyher ◽  
J.J. Kelly ◽  
L. Konczewicz ◽  
B. Lucznik
Keyword(s):  
Raman Spectroscopy ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration

Electronic characterization of single-layer MoS2 sheets exfoliated on SrTiO3

2012 ◽  
Vol 1474 ◽  
Author(s):  
Benedict Kleine Bußmann ◽  
Kolyo Marinov ◽  
Oliver Ochedowski ◽  
Nils Scheuschner ◽  
Janina Maultzsch ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Direct Bandgap ◽  
Force Microscopy ◽  
Dipole Layer ◽  
Good Agreement

ABSTRACTSingle layer regions of MoS2 on SiO2 and SrTiO3 were identified by Raman spectroscopy and μ-photoluminescence before Kelvin probe force microscopy was performed. For the already known system MoS2/SiO2 we find 1.839 eV for the direct bandgap, in good agreement with earlier results. On MoS2/SrTiO3 the direct bandgap was determined to be 1.829 eV. From our Kelvin probe data we infer that the SrTiO3 substrate leads to a dipole layer at the interface of the MoS2 single layer. The corresponding μ-PL measurements however show no significant decrease of the bandgap. This shows, that in the case of MoS2 the carrier type as well as concentration is not significantly influenced by the choice of SrTiO3 as the substrate compared to SiO2.

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