Realizing Shallow Acceptor Levels in Delafossite CuAlO 2 () Surfaces by Chalcogen Doping

2018 ◽  
Vol 12 (12) ◽  
pp. 1800381
Author(s):  
Han Qin ◽  
Wei Zeng ◽  
Cheng‐Lu Jiang ◽  
Mi Zhong ◽  
Fu‐Sheng Liu ◽  
...  
Keyword(s):  
Shallow Acceptor

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

scholarly journals Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051101
Author(s):  
P. Storm ◽  
S. Gierth ◽  
S. Selle ◽  
M. S. Bar ◽  
H. von Wenckstern ◽  
...  
Keyword(s):  
Shallow Acceptor ◽  
P Type

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

JETP Letters ◽  
2004 ◽  
Vol 79 (8) ◽  
pp. 365-367 ◽  
Author(s):  
A. V. Andrianov ◽  
A. O. Zakhar’in ◽  
I. N. Yassievich ◽  
N. N. Zinov’ev
Keyword(s):  
Shallow Acceptor

scholarly journals Optical Activation Behavior of Ion Implanted Acceptor Species in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 507-513 ◽  
Author(s):  
B.J. Skromme ◽  
G.L. Martinez
Keyword(s):  
Variable Temperature ◽  
Spectroscopic Properties ◽  
Acceptor Pair ◽  
High Quality ◽  
Shallow Acceptor ◽  
Implantation Damage ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Optical Binding ◽  
Dose Dependent

Ion implantation is used to investigate the spectroscopic properties of Mg, Be, and C acceptors in GaN. Activation of these species is studied using low temperature photoluminescence (PL). Low dose implants into high quality undoped hydride vapor phase epitaxial (HVPE) material are used in conjunction with high temperature (1300 °C) rapid thermal anneals to obtain high quality spectra. Dramatic, dose-dependent evidence of Mg acceptor activation is observed without any co-implants, including a strong, sharp neutral Mg acceptor-bound exciton and strong donor-acceptor pair peaks. Variable temperature measurements reveal a band-to-acceptor transition, whose energy yields an optical binding energy of 224 meV. Be and C implants yield only slight evidence of shallow acceptor-related features and produce dose-correlated 2.2 eV PL, attributed to residual implantation damage. Their poor optical activation is tentatively attributed to insufficient vacancy production by these lighter ions. Clear evidence is obtained for donor-Zn acceptor pair and acceptor-bound exciton peaks in Zn-doped HVPE material.

Damage-induced shallow acceptor centre in ion-implanted zinc telluride

1980 ◽  
Vol 53 (1-2) ◽  
pp. 47-53 ◽  
Author(s):  
D. Verity ◽  
F. J. Bryant
Keyword(s):  
Zinc Telluride ◽  
Shallow Acceptor ◽  
Ion Implanted

Shallow acceptor and electron conduction states in BaTiO3

1994 ◽  
Vol 151 (1) ◽  
pp. 199-204 ◽  
Author(s):  
E. Possenriede ◽  
H. Kröse ◽  
T. Varnhorst ◽  
R. Scharfschwerdt ◽  
O. F. Schirmer
Keyword(s):  
Electron Conduction ◽  
Shallow Acceptor

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

Sign in / Sign up

Export Citation Format

Share Document