Integrated TbDyFe film on single‐crystal diamond microelectromechanical resonator for magnetic sensing

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

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Development of Diamond-Based X-ray Detection for High Flux Beamline Diagnostics

MRS Proceedings ◽

10.1557/proc-1203-j19-03 ◽

2009 ◽

Vol 1203 ◽

Author(s):

Jen Bohon ◽

John Smedley ◽

Erik M. Muller ◽

Jeffrey W. Keister

Keyword(s):

Single Crystal ◽

Linear Response ◽

Voltage Dependence ◽

Cvd Diamond ◽

High Flux ◽

National Synchrotron Light Source ◽

X Ray ◽

Single Crystal Diamond ◽

Synchrotron Light ◽

Pulse Structure

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.

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Thermal conductivity of isotopically modified single crystal diamond

Physical Review Letters ◽

10.1103/physrevlett.70.3764 ◽

1993 ◽

Vol 70 (24) ◽

pp. 3764-3767 ◽

Cited By ~ 304

Author(s):

Lanhua Wei ◽

P. K. Kuo ◽

R. L. Thomas ◽

T. R. Anthony ◽

W. F. Banholzer

Keyword(s):

Thermal Conductivity ◽

Single Crystal ◽

Single Crystal Diamond

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Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

MRS Proceedings ◽

10.1557/proc-354-717 ◽

1994 ◽

Vol 354 ◽

Author(s):

Shuji Kiyohara ◽

Iwao Miyamoto

Keyword(s):

Surface Roughness ◽

Single Crystal ◽

Incidence Angle ◽

Ion Beam ◽

Etching Rate ◽

Hydrogen Ion ◽

Hydrogen Ions ◽

Ion Beam Etching ◽

Single Crystal Diamond ◽

Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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