scholarly journals Automatic Integrated Circuit Die Positioning in the Scanning Electron Microscope

Scanning ◽  
2006 ◽  
Vol 24 (2) ◽  
pp. 86-91 ◽  
Author(s):  
H. W. Tan ◽  
J. C. H. Phang ◽  
J. T. L. Thong
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.


Author(s):  
James Vickers ◽  
Seema Somani ◽  
Blake Freeman ◽  
Pete Carleson ◽  
Lubomír Tùma ◽  
...  

Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling electrical activity on any transistor within a working device to be probed. We demonstrate gigahertz-bandwidth probing at 10-nm resolution using a stroboscopic pulsed electron source.


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