69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors

2016 ◽  
Vol 47 (1) ◽  
pp. 951-953 ◽  
Author(s):  
Junghwan Kim ◽  
Nobuhiro Nakamura ◽  
Toshio Kamiya ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Stable Oxide

scholarly journals Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

APL Materials ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 022501 ◽  
Author(s):  
Junghwan Kim ◽  
Joonho Bang ◽  
Nobuhiro Nakamura ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Organic materials as a passivation layer for metal oxide semiconductors

2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Organic Materials ◽  
Metal Oxide Semiconductors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
The Stability ◽  
Stability Enhancement

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.

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