Organic materials as a passivation layer for metal oxide semiconductors

2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Organic Materials ◽  
Metal Oxide Semiconductors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
The Stability ◽  
Stability Enhancement

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type

Microstructural modulation of organic passivation layers for metal oxide semiconductors to achieve high bias stability

2020 ◽  
Vol 8 (32) ◽  
pp. 11209-11222
Author(s):  
Dongil Ho ◽  
Ha-Yun Jeong ◽  
Minh Nhut Le ◽  
Hakan Usta ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Bias Stability ◽  
Passivation Layers ◽  
Metal Oxide Thin Film ◽  
High Bias ◽  
Stability Enhancement ◽  
Microstructural Control

This study investigates the microstructural control of organic back-channel passivation layers for bias stability enhancement and electrical property tuning of metal oxide thin-film transistors.

Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors

2020 ◽  
Vol 22 (3) ◽  
pp. 1591-1597 ◽  
Author(s):  
Huiru Wang ◽  
Jiawei He ◽  
Yongye Xu ◽  
Nicolas André ◽  
Yun Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Dopant Incorporation

Hydrogen (H) dopants’ role and active defects inside n-type metal oxide semiconductors (MOXs) are comprehensively studied via continuous H plasma treatment.

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