Self-aligned top-gate amorphous oxide thin-film transistors with IZO/IGZO stacked active layer and Al reacted source/drain region

2019 ◽  
Author(s):  
Baozhu Chang ◽  
Xuan Deng ◽  
Jinao Tao ◽  
Huan Yang ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Drain Region

scholarly journals Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

2012 ◽  
Vol 101 (11) ◽  
pp. 113507 ◽  
Author(s):  
Jaeyeong Heo ◽  
Sang Bok Kim ◽  
Roy G. Gordon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Zinc Tin Oxide
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