Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique

2015 ◽  
Vol 3 (37) ◽  
pp. 9509-9513 ◽  
Author(s):  
Jianmin Yu ◽  
Guoxia Liu ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
...  

High-performance p-type CuxO TFTs were fabricated by a solution process and annealed at various temperatures under vacuum.

2020 ◽  
Vol 12 (22) ◽  
pp. 24929-24939 ◽  
Author(s):  
Won Kyung Min ◽  
Sung Pyo Park ◽  
Hee Jun Kim ◽  
Jin Hyeok Lee ◽  
Kyungho Park ◽  
...  

2014 ◽  
Vol 105 (2) ◽  
pp. 023503 ◽  
Author(s):  
Xu Gao ◽  
Shinya Aikawa ◽  
Nobuhiko Mitoma ◽  
Meng-Fang Lin ◽  
Takio Kizu ◽  
...  

2014 ◽  
Vol 2 (28) ◽  
pp. 5695-5703 ◽  
Author(s):  
Eun Jin Bae ◽  
Young Hun Kang ◽  
Mijeong Han ◽  
Changjin Lee ◽  
Song Yun Cho

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.


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