Benefits and Trade-offs in Multi-Level Air Gap Integration

2006 ◽  
Vol 914 ◽  
Author(s):  
Romano Hoofman ◽  
Roel Daamen ◽  
Viet Nguyenhoang ◽  
Julien Michelon ◽  
Laurent G. Gosset ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Air Gap ◽  
Viable Option ◽  
Capping Layer ◽  
Air Gaps ◽  
Trade Offs ◽  
Multi Level ◽  
Interconnect Systems ◽  
Sacrificial Materials ◽  
Low K

AbstractIn this paper, two different air gap integration approaches are discussed in detail. Firstly, air gaps can be created using sacrificial materials, which are selectively removed through a capping layer either by wet- or dry-etching or by thermal decomposition. The second class benefits from the non-conformal deposition of different CVD dielectrics, which creates air gaps for narrow spaced lines. The benefit of air gaps in terms of capacitance reduction in multilevel interconnects is well known, therefore the authors will mainly concentrate on the challenges associated with the introduction of air gaps in interconnect systems. It will be shown that interconnect containing air gaps does not suffer more from reliability challenges than interconnects with porous low-k dielectrics. Therefore, air gaps can be considered as a viable option for the 32nm node and beyond.

Size-Compatible, Polymer-Based Air-Gap Formation Processes, and Polymer Residue Analysis for Wafer-Level MEMS Packaging Applications

2015 ◽  
Vol 137 (4) ◽  
Author(s):  
Erdal Uzunlar ◽  
Paul A. Kohl
Keyword(s):  
Thermal Decomposition ◽  
Chemical Composition ◽  
Microelectromechanical Systems ◽  
Mechanical Stability ◽  
Residue Analysis ◽  
Air Gap ◽  
Formation Processes ◽  
Gap Formation ◽  
Air Gaps ◽  
Mems Packaging

This study aims at investigating a polymer-based air-gap creation method for the packaging of microelectromechanical systems (MEMS), and exploring the chemical composition of the polymer residue on the final package. Polymer-based air-gap formation utilizes thermal decomposition of a sacrificial polymer, poly(propylene carbonate) (PPC), encapsulated within an overcoat polymer. BCB (Cyclotene 4026-46) was used as the overcoat material because decomposition products of sacrificial polymer are able to permeate through it, leaving an embedded air-gap structure around the MEMS device. Size-compatibility and cleanliness of MEMS devices are important attributes of the polymer-based air-gap MEMS packaging approach. This study provides a framework for size-compatible and clean air-gap formation by selecting the type of PPC, optimizing thermal treatment steps, identifying air-gap formation options, assessing air-gap formation performance, and analyzing the chemical composition of the residue. The air-gap formation processes using photosensitive PPC films had at least twice the residue compared to processes using nonphotosensitive PPC films. The major contribution to the residue in photosensitive PPC films was from the photoacid generator (PAG), which was used to catalyze the thermal decomposition of the PPC. BCB is compatible with PPC, and provides mechanical stability during creation of the air-gaps. The polymer-based air-gaps provide a monolithic, low-cost, integrated circuit compatible MEMS packaging option.

Fabrication of Air-Gaps Between Cu Interconnects for Low Intralevel k.

2000 ◽  
Vol 612 ◽  
Author(s):  
Dhananjay M. Bhusari ◽  
Michael D. Wedlake ◽  
Paul A. Kohl ◽  
Carlye Case ◽  
Fred P. Klemens ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Material ◽  
Air Gap ◽  
Air Gaps ◽  
Cu Interconnects ◽  
Damascene Process ◽  
Place Holder ◽  
Excellent Control ◽  
Side Walls ◽  
Low K

AbstractWe present here a method for fabrication of air-gaps between Cu-interconnects to achieve low intralevel dielectric constant, using a sacrificial polymer as a ‘place holder’. IC compatible metallization and CMP processes were used in a single damascene process. The air-gap occupies the entire intralevel volume between the copper lines with fully densified SiO2 as the planer interlevel dielectric. The width of the air-gaps was 286 nm and the width of the copper lines was 650 nm. The effective intralevel dielectric constant was calculated to be 2.19. The thickness of the interlevel SiO2 and copper lines were 1100 nm and 700 nm, respectively. Further reduction in the value of intralevel dielectric constant is possible by optimization of the geometry of the metal/air-gap structure, and by use of a low k interlevel dielectric material.In this method of forming air-gaps, the layer of sacrificial polymer was spin-coated onto the substrate and formed into the desired pattern using an oxide or metal mask and reactive-ion-etching. The intralevel Cu trench is then inlaid using a damascene process. After the CMP of copper, interlevel SiO2 is deposited by plasma-CVD. Finally, the polymer place-holder is thermally decomposed with the decomposition products permeating through the interlevel dielectric material. The major advantages of this method over other reported methods of formation of air-gaps are excellent control over the geometry of the air-gaps; no protrusion of air-gaps into the interlevel dielectric; no deposition of SiO2 over the side-walls, and no degradation of the interlevel dielectric during the formation of air-gap.

scholarly journals Do air-gaps behind soft body armour affect protection?

2017 ◽  
Vol 164 (1) ◽  
pp. 15-18 ◽  
Author(s):  
Lee Tilsley ◽  
D J Carr ◽  
C Lankester ◽  
C Malbon
Keyword(s):  
Ceramic Composite ◽  
Air Gap ◽  
The Body ◽  
Gap Size ◽  
Soft Body ◽  
Air Gaps ◽  
Body Armour ◽  
Ballistic Protection ◽  
Back Face ◽  
Full Metal Jacket

IntroductionBody armour typically comprises a fabric garment covering the torso combined with hard armour (ceramic/composite). Some users wear only soft armour which provides protection from sharp weapons and pistol ammunition. It is usually recommended that body armour is worn against the body with no air-gaps being present between the wearer and the armour. However, air-gaps can occur in certain situations such as females around the breasts, in badly fitting armour and where manufacturers have incorporated an air-gap claiming improvements in thermophysiological burden. The effect of an air-gap on the ballistic protection and the back face signature (BFS) as a result of a non-perforating ballistic impact was determined.MethodsArmour panels representative of typical police armour (400x400 mm) were mounted on calibrated Roma Plastilina No 1 and impacted with 9 mm Luger FMJ (9×19 mm; full metal jacket; Dynamit Nobel DM11A1B2) ammunition at 365±10 m/s with a range of air-gaps (0–15 mm). Whether or not the ammunition perforated the armour was noted, the BFS was measured and the incidence of pencilling (a severe, deep and narrow BFS) was identified.ResultsFor 0° impacts, a critical air-gap size of 10 mm is detrimental to armour performance for the armour/ammunition combination assessed in this work. Specifically, the incidences of pencilling were more common with a 10 mm air-gap and resulted in BFS depth:volume ratios ≥1.0. For impacts at 30° the armour was susceptible to perforation irrespective of air-gap.ConclusionsThis work suggested that an air-gap behind police body armour might result in an increased likelihood of injury. It is recommended that body armour is worn with no air-gap underneath.

Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

2006 ◽  
Vol 18 (S1) ◽  
pp. 31-36
Author(s):  
Swantje Frühauf ◽  
Stefan E. Schulz ◽  
Thomas Gessner
Keyword(s):  
Mesoporous Sio2 ◽  
Interconnect Systems ◽  
Low K

A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application

2001 ◽  
Vol 45 (1) ◽  
pp. 199-203 ◽  
Author(s):  
Chung-Hui Chen ◽  
Yean-Kuen Fang ◽  
Chun-Sheng Lin ◽  
Chih-Wei Yang ◽  
Jang-Cheng Hsieh
Keyword(s):  
Multi Level ◽  
Low K

Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects

2014 ◽  
Author(s):  
Hiroaki Kawasaki ◽  
Kenji Matsumoto ◽  
Hiroyuki Nagai ◽  
Yuuki Kikuchi ◽  
Peng Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Capping Layer ◽  
Layer Deposition ◽  
Low K

scholarly journals Effect of Air Gap on Electrical Tree in Epoxy Resin Under High Frequency Bipolar Square-Wave Voltage

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5722
Author(s):  
Shihang Wang ◽  
Chuang Zhang ◽  
Hang Fu ◽  
Jiao Xiang ◽  
Jianying Li ◽  
...  
Keyword(s):  
Epoxy Resin ◽  
High Frequency ◽  
Air Gap ◽  
Heat Accumulation ◽  
Air Gaps ◽  
Square Wave ◽  
Electrical Tree ◽  
Electrical Trees ◽  
Voltage Frequency ◽  
Tree Characteristics

Insulation fails quickly under high-frequency AC high voltage, especially bipolar square-wave voltage with a high dV/dt. It is of great significance to study the failure mechanism of epoxy casting insulation under such kind of voltage. In this paper, pin-plane epoxy casting insulation samples with air gaps were prepared, and the relation between the electrical trees under the high frequency bipolar square-wave voltage and the air gap conditions and voltage frequencies (1~20 kHz) were studied. Results indicated that, with the presence of air gaps, the electrical trees were bush-type and had a relatively slow growth rate, which was different from the fast-growing branch-type trees in the samples without air gap. The electrical tree characteristics related with the size of air gap and voltage frequency were also studied. The electrical tree grew faster under higher voltage frequency or with a smaller air gap. Results proved that discharge introduced a lot of defects for the surface layer of the epoxy resin samples and hence induced the possibility of multi-directional expansion of electrical trees. In addition, the resulting heat accumulation and unique charge transport synergistically affected the electrical tree characteristics under the high frequency bipolar square-wave voltage.

Sign in / Sign up

Export Citation Format

Share Document