Preparation and Electrical Characterization of Ruthenia-Doped Yttria-Stabilized Zirconia Ceramics

1998 ◽  
Vol 141 (1) ◽  
pp. 282-289 ◽  
Author(s):  
M.T. Colomer ◽  
J.R. Jurado
Author(s):  
Juan Luis Pantoja-Pertegal ◽  
Antonio Díaz-Parralejo ◽  
Antonio Macías-García ◽  
J.Sánchez González ◽  
Eduardo M. Cuerda-Correa

1997 ◽  
Vol 56 (10) ◽  
pp. 5856-5865 ◽  
Author(s):  
B. Savoini ◽  
J. E. Muñoz Santiuste ◽  
R. González

2019 ◽  
Vol 739 ◽  
pp. 149-157 ◽  
Author(s):  
José Eduardo Vasconcellos Amarante ◽  
Marcos Venícius Soares Pereira ◽  
Grace Mendonça de Souza ◽  
Manuel Fellipe R. Pais Alves ◽  
Bruno Galvão Simba ◽  
...  

1983 ◽  
Vol 24 ◽  
Author(s):  
J. K. Cochran ◽  
K. O. Legg ◽  
H. F. Solnick-Legg

ABSTRACTSingle crystal yttria stabilized zirconia was implanted with 100 keV Ca+, Al+, and O2+ ions at fluences of 1015 to 6 × 1016 ions/cm2; . Blistering was observed at doses of 3 × 1016; O2;+ cm−2; and 6 × 1016; Al+ cm−2; but none was evident with Ca+. Knoop microhardness with a shallow indenter penetration depth peaked at a dose of 1016; ions/cm−2; for both Al+ and O2;+ but Ca+ produced no effect on microhardness. Vicker's microhardness with a much greater indenter penetration depth was not changed detectably by implantation but fracture toughness measurements from the same Vicker's indentations exhibited 10–23% increases at the highest O2+ doses and 20–25% increases at high Al+ doses. Annealing the highest implant doses at 1200° reduced the fracture toughness to pre-implant levels. Reflection electron diffraction showed that the surface had not been made amorphous by the 6 × 1016; Al+ dose as a well crystallized diffraction pattern was obtained.


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