scholarly journals Electrical characterization of metal‐insulator‐semiconductor diodes fabricated from laser‐ablated YBa2Cu3O7−δ /yttria‐stabilized zirconia films on Si substrates

1991 ◽  
Vol 59 (22) ◽  
pp. 2889-2891 ◽  
Author(s):  
Eric M. Ajimine ◽  
Felino E. Pagaduan ◽  
M. M. Rahman ◽  
Cary Y. Yang ◽  
Hiroshi Inokawa ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Si Substrates ◽  
Zirconia Films

EPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY R.F. MAGNETRON SPUTTERING

1991 ◽  
Vol 05 (27) ◽  
pp. 1829-1835 ◽  
Author(s):  
Q.X. SU ◽  
L. LI ◽  
Y.Y. ZHAO ◽  
Y.Z. ZHANG ◽  
P. XU
Keyword(s):  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Processing Conditions ◽  
Full Width ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Si Substrates ◽  
Zirconia Films ◽  
Scanning Electron

Yttria-stabilized Zirconia(YSZ) films were deposited on (100)Si substrates by R.F. magnetron sputtering method. X-ray diffraction analysis showed that the best YSZ films were cubic in structure and was grown epitaxially with (100) orientation. The (200) peak of YSZ films was 0.8° of the full width at half of the maximum, X-ray diffraction based on Seemann-Bohlin focusing geometry showed no peaks. The morphology of the YSZ films was observed by scanning electron microscopy. The effects of the processing conditions (such as substrate temperature, oxygen partial pressure, etc.) on the structure of the film were also discussed.

Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

2002 ◽  
Vol 80 (10) ◽  
pp. 1800-1802 ◽  
Author(s):  
E. Anulekha Manjari ◽  
A. Subrahmanyam ◽  
N. DasGupta ◽  
A. DasGupta
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

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