Circuit Models of Nanoscale Devices

2009 ◽  
pp. 117-127
Author(s):  
Árpád I. Csurgay ◽  
Wolfgang Porod
Keyword(s):  
Nanoscale Devices

Nanoscale Devices and Novel Engineered Materials

2001 ◽  
Author(s):  
S. J. Pearton ◽  
P. H. Holloway ◽  
R. K. Singh ◽  
A. F. Hebard ◽  
S. Hershfield
Keyword(s):  
Nanoscale Devices ◽  
Engineered Materials

Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices

2021 ◽  
pp. 1-1
Author(s):  
Siying Zheng ◽  
Jiuren Zhou ◽  
Harshit Agarwal ◽  
Jian Tang ◽  
Hongrui Zhang ◽  
...  
Keyword(s):  
Nanoscale Devices ◽  
Electrostatic Doping

Reliable circuit analysis and design using nanoscale devices

2013 ◽  
Author(s):  
Renu Kumawat ◽  
Vineet Sahula ◽  
M. S. Gaur
Keyword(s):  
Circuit Analysis ◽  
Nanoscale Devices ◽  
Analysis And Design

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

CARBON TUBE-BASED NANOTRANSISTORS

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Conducting Channel ◽  
Carbon Tube

В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nanotube field effect transistors (CNTFETs) are promising nanoscale devices for implementing high-performance circuits with very dense and low power. The CNTFET conducting channel is a carbon nanotube.

Optical bistability of planar metal/dielectric nonlinear nanostructures

2006 ◽  
Vol 14 (3) ◽  
Author(s):  
R. Noskov ◽  
A. Zharov
Keyword(s):  
Dielectric Permittivity ◽  
Field Intensity ◽  
Optical Bistability ◽  
Nonlinear Response ◽  
Nanoscale Devices ◽  
Nonlinear Dielectric ◽  
Transmission Properties ◽  
All Optical ◽  
Effective Dielectric Permittivity

AbstractWe study theoretically a nonlinear response of the planar metal/dielectric nanostructures constituted from periodical array of ultra thin silver layers and the layers of Kerr-like nonlinear dielectric. We predict hysteresis-type dependences of the components of the tensor of effective dielectric permittivity on the field intensity allowing the change in material transmission properties from transparent to opaque and back at extremely low intensities of the light. It makes possible to control the light by light in all-optical nanoscale devices and circuits.

Modeling Self-Heating Effects in Nanoscale Devices

Nanophononics ◽  
2017 ◽  
pp. 1-30
Author(s):  
Katerina Raleva ◽  
Abdul Rawoof Shaik ◽  
Suleman Sami Qazi ◽  
Robin Daugherty ◽  
Akash Laturia ◽  
...  
Keyword(s):  
Nanoscale Devices ◽  
Self Heating ◽  
Heating Effects

scholarly journals Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

2005 ◽  
Vol 44 (4B) ◽  
pp. 2187-2190 ◽  
Author(s):  
Anisur Rahman ◽  
Gerhard Klimeck ◽  
Mark Lundstrom ◽  
Timothy B. Boykin ◽  
Nizami Vagidov
Keyword(s):  
Scaling Limit ◽  
Nanoscale Devices ◽  
Valley Splitting
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