High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies

ABSTRACTThis paper presents strong evidence for carbon and oxygen gettering during high dose implantation of Cr and Al into Si by implanted ions or Si atoms. Rutherford Backscattering (RBS) and Auger Electron Spectroscopy (AES) experiments of Cr and Al implanted Si samples in a diffusion pumped vacuum (DPV) system (≃ 10−6 Torr) clearly indicate that the incorporation of carbon or oxygen occurs preferentially and depends on the surface composition which is controlled by the dose of implantation and by sputteripg.The implantation of Cr and Al in a DPV system (≃ 10−6 Torr) results in a large increase in the concentration and retention of implanted atoms compared to implantation in a UHV system (≃ 10−8 Torr). For implantation in a DPV system, the Cr distribution broadens up to a factor of two. For Al a bimodal or broadened distribution could be observed by nuclear resonance profiling (NRP).

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High dose implantation of nitrogen in tool steel: Auger electron spectroscopy and hardness measurements

Thin Solid Films ◽

10.1016/0040-6090(93)90613-t ◽

1993 ◽

Vol 228 (1-2) ◽

pp. 267-271 ◽

Cited By ~ 12

Author(s):

L.J. Bredell ◽

J.B. Malherbe

Keyword(s):

Auger Electron Spectroscopy ◽

Tool Steel ◽

Electron Spectroscopy ◽

Auger Electron ◽

High Dose ◽

High Dose Implantation

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Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen

Materials Science Forum ◽

10.4028/www.scientific.net/msf.248-249.253 ◽

1997 ◽

Vol 248-249 ◽

pp. 253-256 ◽

Cited By ~ 1

Author(s):

T. Hauser ◽

L. Bredell ◽

H. Gaigher ◽

H. Alberts ◽

A. Botha ◽

...

Keyword(s):

Electron Beam ◽

High Dose ◽

Pulsed Electron Beam ◽

High Dose Implantation

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Silicon on Insulator by High Dose Implantation

MRS Proceedings ◽

10.1557/proc-33-41 ◽

1984 ◽

Vol 33 ◽

Cited By ~ 16

Author(s):

P. L. F. Hemment

Keyword(s):

Physical Properties ◽

Thermal Processing ◽

Vlsi Circuits ◽

Silicon On Insulator ◽

High Dose ◽

High Current ◽

Processing Technologies ◽

Oxygen Ions ◽

High Doses ◽

High Dose Implantation

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.411 ◽

2017 ◽

Vol 897 ◽

pp. 411-414 ◽

Cited By ~ 4

Author(s):

Craig A. Fisher ◽

Romain Esteve ◽

Stefan Doering ◽

Michael Roesner ◽

Martin de Biasio ◽

...

Keyword(s):

High Temperature ◽

Room Temperature ◽

High Dose ◽

Stress Determination ◽

Analysis Techniques ◽

Physical Study ◽

Crystal Damage ◽

Activation Annealing ◽

Anneal Temperature ◽

High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

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Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

MRS Proceedings ◽

10.1557/proc-53-233 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 5

Author(s):

F. Namavar ◽

J. I. Budnick ◽

F. H. Sanchez ◽

H. C. Hayden

Keyword(s):

Liquid Nitrogen ◽

Current Density ◽

Room Temperature ◽

Rutherford Backscattering ◽

High Dose ◽

Crystalline Quartz ◽

Oxygen Ions ◽

High Dose Implantation ◽

A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

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