Phonon Scattering and Ultrasonic Absorption by Acceptors in Si and Ge

1976 ◽  
pp. 323-327
Author(s):  
T. Ishiguro ◽  
H. Tokumoto
Keyword(s):  
Phonon Scattering ◽  
Ultrasonic Absorption

Towards quantitative simulations of inelastic electron diffraction patterns and images

1992 ◽  
Vol 50 (2) ◽  
pp. 1170-1171
Author(s):  
Z. L. Wang
Keyword(s):  
Phonon Scattering ◽  
Incident Beam ◽  
Dynamical Theory ◽  
Inelastic Electron ◽  
Additional Advantage ◽  
Coupled Equations ◽  
Atomic Vibrations ◽  
Diffraction Patterns ◽  
Primary Advantage ◽  
The One

A new dynamical theory has been developed based on Yoshioka's coupled equations for describing inelastic electron scattering in thin crystals. Compared to existing theories, the primary advantage of this theory is that the incoherent summation of the diffracted intensities contributed by electrons after exciting vast numbers of different excited states has been evaluated before any numerical calculation. An additional advantage is that the phase correlations of atomic vibrations are considered, so that full lattice dynamics can be combined in the phonon scattering calculation. The new theory has been proven to be equivalent to the inelastic multislice theory, and has been applied to calculate energy-filtered diffraction patterns and images formed by phonon, single electron and valence scattered electrons.A calculated diffraction pattern of elastic and phonon scattered electrons for a parallel incident beam case is in agreement with the one observed (Fig. 1), showing thermal diffuse scattering (TDS) streaks and Kikuchi pattern.

MULTIPLE RESONANT RAMAN SPIN-FLIP PHONON SCATTERING AND 29 CM-1 PHONON TRANSPORT IN EXCITED RUBY IN A MAGNETIC FIELD

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-462-C6-464
Author(s):  
A. A. Kaplyanskii ◽  
S. A. Basoon ◽  
V. L. Shekhtman
Keyword(s):  
Magnetic Field ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Spin Flip ◽  
Resonant Raman

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1564
Author(s):  
Jin Hee Kim ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Lattice Distortion ◽  
Phonon Scattering ◽  
Iodine Concentration ◽  
Mean Free Path ◽  
Bandgap Energy ◽  
Diffusion Effect ◽  
Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

scholarly journals Acoustic cavities in 2D heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maxim K. Zalalutdinov ◽  
Jeremy T. Robinson ◽  
Jose J. Fonseca ◽  
Samuel W. LaGasse ◽  
Tribhuwan Pandey ◽  
...  
Keyword(s):  
Sound Propagation ◽  
Phonon Scattering ◽  
Frequency Comb ◽  
Material Interfaces ◽  
Low Frequencies ◽  
Strongly Coupled ◽  
Propagation Analysis ◽  
Acoustic Cavities ◽  
Ab Initio Approach ◽  
Spatiotemporal Response

AbstractTwo-dimensional (2D) materials offer unique opportunities in engineering the ultrafast spatiotemporal response of composite nanomechanical structures. In this work, we report on high frequency, high quality factor (Q) 2D acoustic cavities operating in the 50–600 GHz frequency (f) range with f × Q up to 1 × 1014. Monolayer steps and material interfaces expand cavity functionality, as demonstrated by building adjacent cavities that are isolated or strongly-coupled, as well as a frequency comb generator in MoS2/h-BN systems. Energy dissipation measurements in 2D cavities are compared with attenuation derived from phonon-phonon scattering rates calculated using a fully microscopic ab initio approach. Phonon lifetime calculations extended to low frequencies (<1 THz) and combined with sound propagation analysis in ultrathin plates provide a framework for designing acoustic cavities that approach their fundamental performance limit. These results provide a pathway for developing platforms employing phonon-based signal processing and for exploring the quantum nature of phonons.

scholarly journals Electron-phonon scattering in β-Ga2O3 studied by ultrafast transmission spectroscopy

2021 ◽  
Vol 118 (24) ◽  
pp. 242107
Author(s):  
Saulius Marcinkevičius ◽  
James S. Speck
Keyword(s):  
Phonon Scattering ◽  
Transmission Spectroscopy ◽  
Electron Phonon Scattering
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