High Resolution X-Ray Diffraction for the Characterization of Semiconducting Materials

1990 ◽  
pp. 1-11 ◽  
Author(s):  
B. K. Tanner
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
X Ray

scholarly journals High-resolution characterization of the forbidden Si 200 and Si 222 reflections

2015 ◽  
Vol 48 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Peter Zaumseil
Keyword(s):  
High Resolution ◽  
Angular Range ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Diffraction Plane ◽  
X Ray ◽  
Sample Orientation ◽  
Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

High Resolution X-Ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1997 ◽  
pp. 439-448 ◽  
Author(s):  
A. Sanz-Hervás ◽  
C. Villar ◽  
M. Aguilar ◽  
A. Sacedón ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray

Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction

2011 ◽  
Vol 10 (4) ◽  
pp. 827-831 ◽  
Author(s):  
Jiunn-Chyi Lee ◽  
Ya-Fen Wu ◽  
Tzer-En Nee ◽  
Jen-Cheng Wang
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

High Resolution X-ray Diffraction for the Characterization of Semiconducting Materials

1989 ◽  
Vol 33 ◽  
pp. 1-11 ◽  
Author(s):  
B. K. Tanner
Keyword(s):  
Bragg Peak ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
Multiple Reflections ◽  
X Ray ◽  
Analyzer Crystal ◽  
Glancing Angle ◽  
Heteroepitaxial Layers

AbstractUse of a reference crystal to condition the beam in the double-axis diffractometer permits the Bragg peak width to be reduced to the correlation of the two crystal reflecting ranges. Some recent applications of double axis diffractometry to the study of heteroepitaxial layers are discussed. The advantages of multiple reflections for beam conditioning and the four reflection DuMond monochromator are examined. Glancing incidence and exit diffractometry permits the study of very thin layers, down to a few tens of nanometres in thickness and both synchrotron radiation and skew reflections can be used to tune the glancing angle close to the critical angle. Recent applications of triple-axis diffraction, where an analyzer crystal is used after the specimen, to the study of very thin single epitaxial layers and multiquantum well structures are reviewed.

Characterization of Amorphized Zeolite A by Combining High-Energy X-ray Diffraction and High-Resolution Transmission Electron Microscopy

2012 ◽  
Vol 116 (48) ◽  
pp. 25293-25299 ◽  
Author(s):  
Kaku Sato ◽  
Toru Wakihara ◽  
Shinji Kohara ◽  
Koji Ohara ◽  
Junichi Tatami ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Energy ◽  
Zeolite A ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron
Sign in / Sign up

Export Citation Format

Share Document