Normal-Incidence p-Type Si/SiGe Mid-Infrared Detector with Background-Limited Performance up to 85 K

Author(s):  
Peter Kruck ◽  
Manfred Helm ◽  
Günther Bauer ◽  
Joachim F. Nützel ◽  
Gerhard Abstreiter
1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.


1996 ◽  
Vol 450 ◽  
Author(s):  
M. Helm ◽  
P. Kruck ◽  
T. Fromherz ◽  
M. Seto ◽  
G. Bauer ◽  
...  

ABSTRACTA survey is given about the potential use of Si/SiGe heterostructures for applications in the mid-infrared spectral range. We discuss theoretical foundations and experiments of intersubband absorption in p-type Si/SiGe quantum wells and show that due to the complex valence-band structure, normal-incidence absorption can be observed. On the basis of these quantum wells, mid-infrared detectors were fabricated and characterized in terms of responsivity, dark current and detectivity. In asymmetric, compositionally stepped quantum wells second harmonic generation of CO2 laser radiation has been demonstrated.


2009 ◽  
Vol 34 (13) ◽  
pp. 2036 ◽  
Author(s):  
G. Ariyawansa ◽  
P. V. V. Jayaweera ◽  
A. G. U. Perera ◽  
S. G. Matsik ◽  
M. Buchanan ◽  
...  

2007 ◽  
Vol 50 (2-3) ◽  
pp. 211-216 ◽  
Author(s):  
S.V. Bandara ◽  
S.D. Gunapala ◽  
D.Z. Ting ◽  
J.K. Liu ◽  
C.J. Hill ◽  
...  

1995 ◽  
Vol 24 (5) ◽  
pp. 559-564 ◽  
Author(s):  
G. J. Brown ◽  
F. Szmulowicz ◽  
S. M. Hegde

2016 ◽  
Vol 87 (6) ◽  
pp. 063119 ◽  
Author(s):  
Mbaye Faye ◽  
Michel Bordessoule ◽  
Brahim Kanouté ◽  
Jean-Blaise Brubach ◽  
Pascale Roy ◽  
...  

2005 ◽  
Author(s):  
S. V. Bandara ◽  
S. D. Gunapala ◽  
D Z. Ting ◽  
J. K. Liu ◽  
C. J. Hill ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (11) ◽  
pp. 2513 ◽  
Author(s):  
Christian Ranacher ◽  
Cristina Consani ◽  
Andreas Tortschanoff ◽  
Lukas Rauter ◽  
Dominik Holzmann ◽  
...  

The detection of infrared radiation is of great interest for a wide range of applications, such as absorption sensing in the infrared spectral range. In this work, we present a CMOS compatible pyroelectric detector which was devised as a mid-infrared detector, comprising aluminium nitride (AlN) as the pyroelectric material and fabricated using semiconductor mass fabrication processes. To ensure thermal decoupling of the detector, the detectors are realized on a Si3N4/SiO2 membrane. The detectors have been tested at a wavelength close to the CO2 absorption region in the mid-infrared. Devices with various detector and membrane sizes were fabricated and the influence of these dimensions on the performance was investigated. The noise equivalent power of the first demonstrator devices connected to a readout circuit was measured to be as low as 5.3 × 10 − 9 W / Hz .


2019 ◽  
Vol 131 (1006) ◽  
pp. 124502 ◽  
Author(s):  
Taro Matsuo ◽  
Thomas P. Greene ◽  
Roy R. Johnson ◽  
Robert E. Mcmurray ◽  
Thomas L. Roellig ◽  
...  

2002 ◽  
Vol 41 (S1) ◽  
pp. 73
Author(s):  
Wang Mingkai ◽  
Li Yonggui ◽  
Fan Yaohui ◽  
Li Xizhi

Sign in / Sign up

Export Citation Format

Share Document