Epitaxial Growth of MG on PD(100) and AG(100): Growth Modes for Complete and Incomplete Adlayer Condensation

ABSTRACTThe nucleation and epitaxial growth of deposits at both low and high temperature substrate conditions and the resulting two and three dimensional growth modes have been investigated using electron diffraction and transmission electron microscopy. At high temperatures, the growth of small particles such as Au, Pt and Ge grown under low rate conditions similar to MBE are revealed by lattice imaging. Using an intermediate bufler layer Ag film, surface growth of (100) and (310) Au thin film layers are revealed by diffraction contrast to be in a step ledge growth regime. While the above investigations were performed ex situ to the microscope vacuum environment, an in situ evaporator has been also been installed on a high resolution electron microscope. Observations can be made in real time of cluster growth from atomic diameters on up. The resulting atomic motion around cluster edges is similar in appearance to surface melting.

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Interface chemistry and epitaxial growth modes ofSrF2on Si(001)

Physical Review B ◽

10.1103/physrevb.75.075403 ◽

2007 ◽

Vol 75 (7) ◽

Cited By ~ 10

Author(s):

L. Pasquali ◽

S. M. Suturin ◽

A. K. Kaveev ◽

V. P. Ulin ◽

N. S. Sokolov ◽

...

Keyword(s):

Epitaxial Growth ◽

Interface Chemistry ◽

Growth Modes

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First-Principles Study of SI(lll) Homoepitaxy

MRS Proceedings ◽

10.1557/proc-538-341 ◽

1998 ◽

Vol 538 ◽

Author(s):

Kyeongjae Cho ◽

Efthimios Kaxiras

Keyword(s):

Epitaxial Growth ◽

First Principles ◽

Morphological Evolution ◽

Cluster Formation ◽

Growth Conditions ◽

Growth Modes ◽

Pseudopotential Calculations ◽

Step Density ◽

Formation Energies ◽

Microscopic Energy

AbstractEpitaxial growth on the Si(111) surface is studied using first-principles total-energy pseudopotential calculations. The energetics of added Si atoms essentially determines epitaxial growth modes under different growth conditions (surface temperature, Si flux rate, and surface step density). We have determined the surface adatom diffusion barriers and cluster formation energies; we use these microscopic energy parameters to address the possibilities for macroscopic morphological evolution of the surface under different conditions.

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Organic superstructure microwires with hierarchical spatial organisation

Nature Communications ◽

10.1038/s41467-021-22513-5 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Ming-Peng Zhuo ◽

Guang-Peng He ◽

Xue-Dong Wang ◽

Liang-Sheng Liao

Keyword(s):

Epitaxial Growth ◽

Heterogeneous Nucleation ◽

Dissimilar Materials ◽

Core Shell ◽

Spatial Organisation ◽

Design And Synthesis ◽

Material Chemistry ◽

Growth Modes ◽

Key Issues ◽

Organic Nanomaterials

AbstractRationally designing and precisely constructing the dimensions, configurations and compositions of organic nanomaterials are key issues in material chemistry. Nevertheless, the precise synthesis of organic heterostructure nanomaterials remains challenging owing to the difficulty of manipulating the homogeneous/heterogeneous-nucleation process and the complex epitaxial relationships of combinations of dissimilar materials. Herein, we propose a hierarchical epitaxial-growth approach with the combination of longitudinal and horizontal epitaxial-growth modes for the design and synthesis of a variety of organic superstructure microwires with accurate spatial organisation by regulating the heterogeneous-nucleation crystallisation process. The lattice-matched longitudinal and horizontal epitaxial-growth modes are separately employed to construct the primary organic core/shell and segmented heterostructure microwires. Significantly, these primary organic core/shell and segmented microwires are further applied to construct the core/shell-segmented and segmented-core/shell type’s organic superstructure microwires through the implementation of multiple spatial epitaxial-growth modes. This strategy can be generalised to all organic microwires with tailored multiple substructures, which affords an avenue to manipulate their physical/chemical features for various applications.

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Control of Epitaxial Growth Modes for High-Performance Devices

Crystal Growth Technology ◽

10.1002/0470871687.ch28 ◽

2004 ◽

pp. 621-644 ◽

Cited By ~ 1

Author(s):

Hans J. Scheel

Keyword(s):

Epitaxial Growth ◽

High Performance ◽

Growth Modes

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A Comparison of Growth and Magnetic Properties of FE(ll0)/AG(lll) and FE(100)/AG(100) Multilayers

MRS Proceedings ◽

10.1557/proc-231-411 ◽

1991 ◽

Vol 231 ◽

Author(s):

J.C. Walker ◽

H. Tang ◽

M.D. Wieczorek ◽

D.J. Keavney ◽

D.F. Storm ◽

...

Keyword(s):

Magnetic Properties ◽

Curie Temperature ◽

Substrate Temperature ◽

Epitaxial Growth ◽

Growth Parameters ◽

Optimal Growth ◽

Interfacial Properties ◽

Growth Modes ◽

Structural Differences ◽

Strong Relaxation

AbstractTwo series of Fe/Ag multilayers were grown in a Perkin-Elmer 430B MBE system, one of the Fe(110)/Ag(lll) orientation and another of the Fe(100)/Ag(100) orientation. Vastly different techniques were developed by this group and others to achieve epitaxial growth of both of these systems. Using RHEED, it was inferred that the optimal growth of Fe(110) on Ag(lll) occurred at a substrate temperature of 180° C. In contrast, the growth of Fe(lO0)/Ag(100) proceeded with the sharpest RHEED streaks at a reduced substrate temperature. We believe that these fundamentally different growth parameters are the result of physically different growth modes, conjectured to be: edge growth (Fe 110), and a more nucleated growth (Fe 100).Accordingly, dissimilar magnetic interfacial properties are also strongly in evidence, accounted for by the structural differences associated with the different Fe planes. Furthermore, Fe(110) layers as thin as 3 ML were grown on Ag(lll) and showed no superparamagnetism and a genuine 2-dimensional behavior of M(T). However, the Fe(100) on Ag(100) multilayers in a similar thickness range exhibited strong relaxation and a comparatively reduced Curie temperature.

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TEM Study of the Growth Modes in ALMBE GaAs Layers on Si

MRS Proceedings ◽

10.1557/proc-281-339 ◽

1992 ◽

Vol 281 ◽

Author(s):

A. Vilà ◽

A. Comet ◽

J. R. Morante ◽

L. González ◽

Y. González ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Epitaxial Growth ◽

Deposition Temperature ◽

Surface Coverage ◽

Gaas On Si ◽

Good Surface ◽

Growth Modes ◽

Transmission Electron

ABSTRACTIn this work, we have compared, by using Transmission Electron Microscopy (TEM) techniques, the initial stages of epitaxial growth of GaAs on Si (100) by conventional MBE and ALMBE, trying to find the conditions necessary to achieve 2D growth at the earliest stage of deposition. Our results show that flat layers with a good surface coverage can be obtained by reducing the GaAs ALMBE deposition temperature down to 200°C.

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