Electron Microscope Studies of Some Vapor Deposited Materials: Nucleation, Epitaxial Growth and Surface Topography

ABSTRACTThe nucleation and epitaxial growth of deposits at both low and high temperature substrate conditions and the resulting two and three dimensional growth modes have been investigated using electron diffraction and transmission electron microscopy. At high temperatures, the growth of small particles such as Au, Pt and Ge grown under low rate conditions similar to MBE are revealed by lattice imaging. Using an intermediate bufler layer Ag film, surface growth of (100) and (310) Au thin film layers are revealed by diffraction contrast to be in a step ledge growth regime. While the above investigations were performed ex situ to the microscope vacuum environment, an in situ evaporator has been also been installed on a high resolution electron microscope. Observations can be made in real time of cluster growth from atomic diameters on up. The resulting atomic motion around cluster edges is similar in appearance to surface melting.

A Selective Growth of GaAs Microcrystals Grown on Se-Terminated GaAlAs Surface for the Quantum well Box Structure

MRS Proceedings ◽

10.1557/proc-283-765 ◽

1992 ◽

Vol 283 ◽

Author(s):

Toyohiro Chikyow ◽

Nobuyuki Koguchi

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Quantum Well ◽

Epitaxial Growth ◽

Selective Growth ◽

Layer Formation ◽

Cross Sectional ◽

Resolution Electron ◽

Box Structure ◽

ABSTRACTA selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3, layer formation at the GaAs/Se-terminated GaAlAs interface.

Scanning Device Combined with Conventional Electron Miscroscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100064190 ◽

1971 ◽

Vol 29 ◽

pp. 28-29

Author(s):

H. Koike ◽

K. Ueno ◽

M. Suzuki

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Basic Function ◽

Transmission Electron ◽

Resolution Electron ◽

Different Types ◽

Specimen Area ◽

Conventional Transmission Electron Microscope

Scanning Em ◽

A scanning image observation device has been developed for use in conjunction with the JEM-100B Electron Microscope, thereby enabling the microscope to function as a high resolution scanning EM in addition to its basic function as a conventioanl high resolution electron microscope. As a result, it is possible to observe three different types of image of the same specimen area; viz, secondary electron images, transmission scanning images and conventional transmission electron microscope images. It is also possible to detect strays and obsorbed electrons, so that, the combined instrument provides a means for obtaining a wealth of information about the specimen.

High Resolution Electron Microscope Using a New 200 kV Electron Gun

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010007792x ◽

1977 ◽

Vol 35 ◽

pp. 60-61

Author(s):

S. Kamimura ◽

T. Katsuta ◽

Y. Minamikawa

Keyword(s):

Electron Microscope ◽

Epoxy Resin ◽

Electron Gun ◽

Insulation Property ◽

Operation And Maintenance ◽

Transmission Electron ◽

Resolution Electron ◽

Electron Microscopes ◽

Application Fields

Higher accelerating voltage has been required of transmission electron microscopes in various research and application fields. In this report, a new electron gun developed by Hitachi, Ltd. will be described. The aim of this development was to design a compact 200 kV electron microscope offering simplicity and convenience of operation and maintenance and the highest possible performance.Description will be made first on the packaged electron gun. Fig. 1 shows the sectional view of the gun. The accelerating tube is built in the gun housing so as to be free from exterior impact. Unlike the conventional gun housing, this one is made of epoxy resin instead of metal. The inside diameter of the housing is reduced to 170 mm due to the excellent insulation property of epoxy resin. A bushing for high voltage cable is mounted on the housing, making its withstand voltage high in spite of the short contour of the housing (140 mm).

300kv high-performance analytical TEM (H-9000)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100125476 ◽

1987 ◽

Vol 45 ◽

pp. 108-109

Author(s):

H. Kobayashi ◽

H. Sato ◽

K. Miyauchi ◽

T. Onai ◽

K. Shii ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Microscope ◽

High Performance ◽

Image Resolution ◽

X Ray ◽

Transmission Electron ◽

Resolution Electron ◽

Analytical Microscopy ◽

Higher voltage operation has many advantages for transmission electron microscopy.These advantages include better TEM image resolution and ease of specimen imaging. For analytical microscopy, the higher voltage operation has advantages such as higher source brightness, and better spatial resolution.We reported development of a 300kV ultra high resolution electron microscope. At this time, we would like to report an analytical type 300kV electron microscope.We have incorporated a side entry specimen stage which permits ±45° specimen tilt and is convenient for characteristic x-ray detection. We have also incorporated an analytical objective polepiece which has Cs of 2. 5mm, Cc of 2. 3mm and theoretical TEM image resolution of 0.23nm.

Transmission Electron Microscopy of II-VI/III-V Semiconductor Heteroepitaxial Interfaces

MRS Proceedings ◽

10.1557/proc-161-127 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 4

Author(s):

D. Li ◽

N. Otsuka ◽

J. Qiu ◽

J. Glenn ◽

M. Kobayashi ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Microscope ◽

Molecular Beam ◽

Dark Field ◽

Group Iii ◽

Transmission Electron ◽

Resolution Electron ◽

Microscope Images ◽

ABSTRACTInterfaces of pseudomorphic (100)ZnSe/GaAs and (100)CdTe/InSb heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. High resolution electron microscope images show dark bands with thicknesses of one or two monolayers at the interfaces. The interfaces appear as bright lines in dark field images of the 200 type reflections, while they become dark lines in dark field images of the 400 type reflections. These observations are explained by assuming the existence of interfaces layers of III2VI3 compounds which have structural vacancies in the sublattices of the group III atoms.

A structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

MRS Proceedings ◽

10.1557/proc-300-519 ◽

1993 ◽

Vol 300 ◽

Author(s):

Toyohiro Chikyow ◽

Michihisa Lijima ◽

Nobuyuki Koguchi

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Quantum Well ◽

Epitaxial Growth ◽

Layer Formation ◽

Cross Sectional ◽

Resolution Electron ◽

Box Structure ◽

Structure Observation ◽

ABSTRACTA selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAIAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and A12Se3 layer formation at the interface of GaAs/Se-terminated GaAIAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

Surface studies with a UHV-TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100122034 ◽

1992 ◽

Vol 50 (1) ◽

pp. 326-327

Author(s):

David J. Smith ◽

M. Gajdardziska-Josifovska ◽

M.R. McCartney

Keyword(s):

Electron Microscope ◽

Surface Profile ◽

High Energy ◽

Operating Modes ◽

Transmission Imaging ◽

Transmission Electron ◽

Resolution Electron ◽

Reflection Electron Microscopy ◽

The provision of ultrahigh vacuum capabilities, as well as in situ specimen treatment and annealing facilities, makes the transmission electron microscope into a potentially powerful instrument for the characterization of surfaces. Several operating modes are available, including surface profile imaging, reflection electron microscopy (REM), and reflection high energy electron diffraction (RHEED), as well as conventional transmission imaging and diffraction. All of these techniques have been utilized in our recent studies of surface structures and reactions for various metals, oxides and semiconductors with our modified Philips-Gatan 430ST high-resolution electron microscope.

The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

Microscopy and Microanalysis ◽

10.1017/s1431927613012294 ◽

2013 ◽

Vol 19 (S5) ◽

pp. 38-42 ◽

Cited By ~ 4

Author(s):

Ludmila I. Fedina ◽

Se Ahn Song ◽

Andrey L. Chuvilin ◽

Anton K. Gutakovskii ◽

Alexander V. Latyshev

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Point Defect ◽

Defect Formation ◽

Silicon Crystal ◽

Equilibrium Structure ◽

Transmission Electron ◽

Resolution Electron ◽

Atomic Chains ◽

AbstractWe report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiNx:H Multilayers

MRS Proceedings ◽

10.1557/proc-609-a25.1 ◽

2000 ◽

Vol 609 ◽

Author(s):

Li Wang ◽

Xinfan Huang ◽

Jian Li ◽

Jun Xu ◽

Xiaobo Yin ◽

...

Keyword(s):

Electron Microscope ◽

Phase Shifting ◽

Laser Interference ◽

Atomic Force ◽

Crystallization Method ◽

Transmission Electron ◽

Resolution Electron ◽

Self Assembled ◽

Si Nanocrystallites

ABSTRACTThe patterned nc-Si/a-SiNx:H superlattices were fabricated by using laser interference crystallization method and investigated with atomic force microscope (AFM), micro-Raman spectroscope, cross-section transmission electron microscope (TEM) and high resolution electron microscope (HREM). We found that after laser irradiation, self-assembled Si nanocrystallites (nc-Si) are formed within the initial a-Si:H sublayers, moreover, in the plane parallel to the surface of the films, these nc-Si orderly distribute in the certain regions with the same periodicity of 2.0 µm as phase shifting mask grating. Based on the structural analyses, the crystallization mechanism and the origin of the self-assembled phenomena are briefly discussed.

The Preparation and Characterization ofβ-SiAlON Nanostructure Whiskers

Journal of Nanomaterials ◽

10.1155/2008/282187 ◽

2008 ◽

Vol 2008 ◽

pp. 1-6 ◽

Cited By ~ 15

Author(s):

Pengli Dong ◽

Xidong Wang ◽

Mei Zhang ◽

Min Guo ◽

Seshadri Seetharaman

Keyword(s):

Electron Microscope ◽

Diameter Distribution ◽

Growth Mechanisms ◽

X Ray Diffraction ◽

Vapor Liquid Solid ◽

X Ray ◽

Transmission Electron ◽

Resolution Electron ◽

Sintering Method

Two kinds ofβ-SiAlON nanostructure whiskers, rod-like and wool-like whiskers, were synthesized by pressure-less sintering method at 1773 K for 5 hours. The whiskers synthesized were characterized by powder X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and high-resolution electron microscope (HREM) techniques. It was found that diameter distribution of rod-like whiskers was about 80–250 nm, while it was about 45–55 nm in diameter for the wool-like whiskers. The growth mechanisms ofβ-SiAlON nanostructure whiskers are discussed by the vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms, respectively.