Fundamentals of Physical Vapor Transport Process

Author(s):  
Ching-Hua Su
2007 ◽  
Vol 19 (23) ◽  
pp. 5531-5537 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Albert V. Davydov ◽  
Mark D. Vaudin ◽  
Igor Levin ◽  
James E. Maslar ◽  
...  

2019 ◽  
Vol 515 ◽  
pp. 21-25 ◽  
Author(s):  
Qikun Wang ◽  
Jiali Huang ◽  
Danyang Fu ◽  
Guangdong He ◽  
Dan Lei ◽  
...  

1996 ◽  
Vol 165 (4) ◽  
pp. 429-437 ◽  
Author(s):  
G.T. Kim ◽  
J.T. Lin ◽  
O.C. Jones ◽  
M.E. Glicksman ◽  
W.M.B. Duval ◽  
...  

1993 ◽  
Vol 32 (Part 1, No. 2) ◽  
pp. 887-892
Author(s):  
Hisami Yumoto ◽  
Tsuneo Watanabe ◽  
Tsutomu Kaneko ◽  
Takashi Ariyama

Author(s):  
Hye Soo Kim ◽  
Soyoung Kim ◽  
Jin Young Koo ◽  
Hee Cheul Choi

An efficient approach to obtaining high purity pentacene crystals via physical vapor transport process is reported, utilizing the physical properties of carrier gases.


2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].


Sign in / Sign up

Export Citation Format

Share Document