Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process

2019 ◽  
Vol 515 ◽  
pp. 21-25 ◽  
Author(s):  
Qikun Wang ◽  
Jiali Huang ◽  
Danyang Fu ◽  
Guangdong He ◽  
Dan Lei ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Mass Transport ◽  
Transport Process ◽  
Vapor Transport ◽  
Physical Vapor Transport

scholarly journals Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1436
Author(s):  
Danyang Fu ◽  
Qikun Wang ◽  
Gang Zhang ◽  
Zhe Li ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Mass Transport ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Growth Chamber ◽  
Physical Vapor Transport ◽  
Rate Variation ◽  
Deposition Surface ◽  
Mass Transport Process

We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects of the powder source on mass transport under various growth conditions were investigated in detail. The simulation results show that the porosity of the powder source significantly affects the mass transport process during AlN sublimation growth. When the porosity of the powder source decreases, the growth rate becomes more uniform along the seed deposition surface, although the sublimation rate and crystal growth rate decrease, which can be attributed to the reduced specific surface area of the powder source and the reduced flow rate of Al vapor in the powder source. A flat growth interface can be achieved at a porosity of 0.2 under our specific growth conditions, which in turn facilitate the growth of high-quality AlN crystals and better yield. The decomposition of the powder source and the transport of Al vapor in the growth chamber can be suppressed by increasing the pressure. In addition, the AlN growth rate variation along the deposition surface can be attributed to the Al vapor pressure gradient caused by the temperature difference in the growth chamber.

Gravity-Driven Convection Studies in Compound Semiconductor Crystal Growth by Physical Vapor Transport

1981 ◽  
Vol 9 ◽  
Author(s):  
John A. Zoutendyk ◽  
Wesley M. Akutagawa
Keyword(s):  
Crystal Growth ◽  
Mass Transport ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Semiconductor Crystal ◽  
Transport Behavior ◽  
Gravity Driven

ABSTRACTGravity-driven convection can alter the diffusive-advective mass transport behavior in the growth of crystals by physical vapor transport. Specially designed and constructed transparent furnaces are being used in our laboratory to study the effects of gravity in crystal growth of the compound semiconductors PbTe and CdTe.

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts

2007 ◽  
Vol 19 (23) ◽  
pp. 5531-5537 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Albert V. Davydov ◽  
Mark D. Vaudin ◽  
Igor Levin ◽  
James E. Maslar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Microwave Heating ◽  
Transport Process ◽  
Metal Catalysts ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Group Viii ◽  
Group Viii Metal

Effect of Temperature Gradient on AlN Crystal Growth by Physical Vapor Transport Method

2019 ◽  
Vol 19 (11) ◽  
pp. 6736-6742 ◽  
Author(s):  
Guodong Wang ◽  
Lei Zhang ◽  
Yong Wang ◽  
Yongliang Shao ◽  
Chengmin Chen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Vapor Transport ◽  
Effect Of Temperature ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method
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