Scanning Electron Microscopy of Hydrogen-Exposed 304 Stainless Steel Bending Fatigue Samples

2014 ◽  
pp. 147-154
Author(s):  
M. Phillips ◽  
K. McLaughlin ◽  
D. Ojeda ◽  
E. Luna ◽  
M. Burke ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
304 Stainless Steel ◽  
Bending Fatigue ◽  
Scanning Electron

scholarly journals Corrosion Inhibition of Honeycomb Waste Extracts for 304 Stainless Steel in Sulfuric Acid Solution

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2120
Author(s):  
Femiana Gapsari ◽  
Kartika A. Madurani ◽  
Firman Mangasa Simanjuntak ◽  
Andoko Andoko ◽  
Hastono Wijaya ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Corrosion Inhibition ◽  
Acid Concentration ◽  
Acid Corrosion ◽  
304 Stainless Steel ◽  
Stainless Steel Surface ◽  
Inhibition Process ◽  
Scanning Electron

The extract of honeycomb waste was studied as a corrosion inhibitor on 304 stainless steel in H2SO4 solutions. The honeycomb waste was obtained from beekeeping at Lawang-Malang, East Java, Indonesia. Electrochemical and scanning electron microscopy methods were used to investigate the performance of the corrosion inhibition process. The inhibition efficiency of the inhibitor (2000 mg/L) reached 97.29% in 0.5 M H2SO4 and decreased with the acid concentration. Kinetic parameters were calculated to explain the effect of acid concentration on the inhibition process. The study on the adsorption behavior of the extracts followed the Frumkin isotherm model. The adsorption of the inhibitor on the 304 stainless steel surface was confirmed by the negative and lower values of Gibbs free energy. The obtained scanning electron microscopy (SEM) images were confirmed by comparing the surface of the specimens with and without inhibitor after corroding for one week. The results indicated that the extract acted as a good inhibitor for 304 stainless steel in acid corrosion.

Analyse of Indium Loss in Preparation of CuInSe2 Flims for Solar Cells

2011 ◽  
Vol 183-185 ◽  
pp. 1837-1841
Author(s):  
Lei Sha ◽  
Yan Lai Wang ◽  
Shi Liang Ban
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Solar Cells ◽  
Surface Morphology ◽  
Energy Dispersive Spectroscopy ◽  
Titanium Substrates ◽  
Selenization Process ◽  
Scanning Electron

CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and titanium substrates by electrodeposition. The films were characterized by XRD, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The respective influences of composition, phases and surface morphology of Cu-In precursors on indium loss were investigated. The results indicate that the indium loss occurs in selenization process because of volatile In2Se arising. The indium loss is less in selenization process of Cu-In precursors contained CuIn, Cu2In and In phases.

Research on the Adhesion of Stainless Steel Film on Gd by Magnetron Sputtering

2011 ◽  
Vol 189-193 ◽  
pp. 129-136
Author(s):  
Xiao Qiu Zheng ◽  
Shi Kun Xie ◽  
Rong Xi Yi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Magnetron Sputtering ◽  
Protective Coating ◽  
Tension Test ◽  
Dc Magnetron Sputtering ◽  
Thin Fiber ◽  
Scanning Electron ◽  
Strength Of Adhesion

In order to research the adhesion of sputtering protective coating of Gd. Gd substrates was coated with 1Cr18Ni9Ti by means of DC magnetron sputtering technology. The characteristics of the film were investigated by scanning electron microscopy (SEM), EDS, SPM and the adhesions of film was tested by tension test. The results show that the films of 1Cr18Ni9Ti are distributed by means of islands when the sputtering was initiated and the grains are like thin fiber. After a few minutes, the films are smooth and perfect, the interferences between 1Cr18Ni9Ti and Gd join together strongly, and the largest strength of adhesion is 24.7MPa when the sputtering density is 966 w/cm2 and the sputtering time is 8 minutes.

Scanning Electron Microscopy of Microbial Attachment to Milk Contact Surfaces1

1981 ◽  
Vol 44 (3) ◽  
pp. 204-208 ◽  
Author(s):  
P. T. ZOLTAI ◽  
E. A. ZOTTOLA ◽  
L. L. MCKAY
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Fibrous Material ◽  
Microbial Colonization ◽  
Lactobacillus Bulgaricus ◽  
Stainless Steel Surface ◽  
Pseudomonas Fragi ◽  
Scanning Electron ◽  
Microbial Attachment

Milk contact surfaces were observed by scanning electron microscopy (SEM) techniques for possible microbial attachment. Cultures of Pseudomonas fragi 4973, Staphylococcus aureus JAL, Streptococcus lactis C2, Streptococcus cremoris and Lactobacillus bulgaricus RR inoculated onto glass coverslips or stainless steel chips were examined. Stainless steel surfaces displayed many possible harborages for microbial colonization. SEM examination of P. fragi 4973 showed development of fibrous material, with numerous stick-like projections extending from the cell to the glass or stainless steel surface. These apparent attachment appendages became more pronounced as contact time increased. S. aureus, S. lactis, S. cremoris and L. bulgaricus did not display such fibrous material.

Effection of Additive on Aluminum Nitride Nano-Wire Synthesis by Double Decomposition Method

2013 ◽  
Vol 744 ◽  
pp. 428-431
Author(s):  
Yan Long Sun ◽  
Li Min Dong ◽  
Tao Jiang ◽  
Cao Guo ◽  
Xiao Qi Zhang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Aluminum Nitride ◽  
Decomposition Method ◽  
Average Diameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Double Decomposition ◽  
Scanning Electron

An method for making AlN(aluminum nitride) nanowires by double decomposition, and the effection of additives was described. Future more, the growth mechanism of AlN nanowire synthesis with addictive were analyzed. AlN nanowire were synthesis by he AlCl3 and NaN3 in stainless steel cauldron without solvent and using Mg and Zn as additive. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study characters of the AlN nanowire. It is shown that the process can produce AlN nanowire with mean diameters ranging from 50 to 100 nm at 450°C. The additive has effective facilitated on the synthesis of aluminum nitride nanowires, can improve the properties of aluminum nitride nanowire, minish the average diameter of aluminum nitride nanowires.

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