Analyse of Indium Loss in Preparation of CuInSe2 Flims for Solar Cells

2011 ◽  
Vol 183-185 ◽  
pp. 1837-1841
Author(s):  
Lei Sha ◽  
Yan Lai Wang ◽  
Shi Liang Ban
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Solar Cells ◽  
Surface Morphology ◽  
Energy Dispersive Spectroscopy ◽  
Titanium Substrates ◽  
Selenization Process ◽  
Scanning Electron

CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and titanium substrates by electrodeposition. The films were characterized by XRD, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The respective influences of composition, phases and surface morphology of Cu-In precursors on indium loss were investigated. The results indicate that the indium loss occurs in selenization process because of volatile In2Se arising. The indium loss is less in selenization process of Cu-In precursors contained CuIn, Cu2In and In phases.

Study of the Localized Heating of Si Solar Cells by Thermal Imaging and Scanning Electron Microscopy

2013 ◽  
Vol 770 ◽  
pp. 157-160
Author(s):  
Buntoon Wiengmoon
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Solar Cells ◽  
Energy Dispersive Spectroscopy ◽  
Thermal Imaging ◽  
Hot Spots ◽  
Micro Cracks ◽  
Impurity Contamination ◽  
Localized Heating ◽  
Scanning Electron

The aim of this study was to investigate the localized solar cells heating by thermal imaging, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The electrical measurements and thermal infrared measurements were done on the commercial crystalline Si cells (10 cm x 10 cm). SEM was used for the observation of the localized heating. The I-V characteristics of all cells were quite similar with a small spread in the electrical parameters, while the IR images were different: some cells had quite uniform temperature profiles distribution and other ones showed the localized heating. The energy dispersive spectroscopy (EDS) analysis showed that some hot spots have high metal impurity contamination. The micro-structure investigation of hot spots revealed the micro-cracks presence. Our study found direct correlation between areas of high impurity contamination, micro cracks and hot-spot heating.

SiC Thin Films by Chemical Conversion of Single Crystal Si

1991 ◽  
Vol 250 ◽  
Author(s):  
Chien C. Chiu ◽  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Surface Morphology ◽  
Smooth Surface ◽  
Reaction Times ◽  
Chemical Conversion ◽  
X Ray ◽  
Sic Films ◽  
Scanning Electron

AbstractThe reaction of (100)Si with C2H2 in a hot wall CVD reactor has been studied using a X-ray photolectron spectroscopy, and a scanning electron microscopy. The growth of the SiC films was observed through the behavior of Si2p peaks and their plasmons. Smooth surface morphology with a monolayer of SiC was obtained at 950°C for 7 minutes and defects were observed for longer reaction times at this temperature. For higher reaction temperatures (e.g. 1000°C), defects were observed for reaction times as short as 10 seconds. The formation of defects was correlated to the out-diffusion of Si in the carborization process.

Structural, Morphological and Raman Studies of CdS/CdSe Sensitized TiO2 Nanocrystalline Thin Films for Quantum Dot Sensitized Solar Cell Applications

2018 ◽  
Vol 14 (5) ◽  
pp. 421-431 ◽  
Author(s):  
Leda G. Bousiakou ◽  
Mile Ivanda ◽  
Lara Mikac ◽  
Dimitris Raptis ◽  
Marijan Gotic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Solar Cells ◽  
Quantum Dot ◽  
Structural Properties ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Sensitized Solar Cells ◽  
Scanning Electron

Background: It is well known that quantum dot-sensitized solar cells based on nanostructured semiconductor films are considered as a promising alternative to silicon-based solar cells. The aim of this paper is to investigate the structural and morphological properties of CdS/CdSe quantum dot sensitized photoanodes based on nanocrystalline TiO2 thin films considering their performance can reach an efficiency of 2.7%. Methods: TiO2 thin films were prepared on fluorine tin oxide (FTO) glass via the chemical route using commercial Degussa 25 and crystallized at 550°C. Furthermore, a layer of CdS and CdSe nanoparticles was deposited on the titania film by a sequence of successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. After preparation, samples were analyzed using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy for their structural properties and composition. Scanning electron microscopy (SEM) was used to investigate their surface morphology, while energy dispersive X-ray spectrometry (EDS) was used to analyze the sample stoichiometry. Results: The structural properties and morphology of quantum dot sensitized photoanodes revealed that the titania thin films were highly crystalline belonging predominantly in the tetragonalanatase structure, while the CdS/CdS quantum dots were in the cubic phase. Furthermore, scanning electron microscopy (SEM) along with energy dispersive X-Ray mapping EDS showed little contamination. Conclusions: Combined analysis suggests that our preparation route leads to highly crystalline, stoichiometric photoanodes. This plays an important role in the performance of the quantum dot sensitized solar cells.

Effect of Compaction on the Surface Morphology of CuInSe2 Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1998-2001
Author(s):  
Xiaojun Yuan ◽  
Yan Lai Wang ◽  
Jin Gang Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Surface Morphology ◽  
Smooth Surface ◽  
Scanning Electron

The CuInSe2 compound was prepared by paste coating and electrodeposition-selenization. Observed by scanning electron microscopy (SEM), the surface morphology of CuInSe2 thin films was improved by compaction. The result of the present work implied that the CuInSe2 film with smooth surface could be obtained under the pressure of 500 MPa at 60 °C.

OPTICAL AND MORPHOLOGICAL CHARACTERIZATION OF (ZnO)x(CdO)1-x THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 663-666
Author(s):  
L. VAILLANT ◽  
O. VIGIL ◽  
G. CONTRERAS-PUENTE ◽  
C. MEJÍA-GARCÍA
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Surface Morphology ◽  
Morphological Characterization ◽  
Morphological Properties ◽  
Optical Technique ◽  
Semiconductor Thin Films ◽  
Scanning Electron

The optical and morphological properties of (ZnO)x(CdO)1-x semiconductor thin films with x composition in the range 0 □ x □ 0.5 are studied by the photoluminescence optical technique (PL), and the Scanning Electron Microscopy (SEM). The evolution of the band associated with oxygen content in the films is observed and described as a function of the film composition and the thermal annealing. The surface morphology is presented, where two different binary semiconducting species can be discerned in proportions dependent on the films composition.

Imaging magnetic microstructure with SEMPA

1993 ◽  
Vol 51 ◽  
pp. 1032-1033
Author(s):  
M. H. Kelley ◽  
J. Unguris ◽  
R. J. Celotta ◽  
D. T. Pierce
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sandwich Structure ◽  
Magnetic Coupling ◽  
Polarization Analysis ◽  
Secondary Electrons ◽  
Magnetic Microstructure ◽  
Escape Depth ◽  
Scanning Electron

By measuring the spin polarization of secondary electrons generated in a scanning electron microscope, scanning electron microscopy with polarization analysis (SEMPA) can directly image the magnitude and direction of a material’s magnetization. Because the escape depth of the secondaries is only on the order of 1 nm, SEMPA is especially well-suited for investigating the magnetization of ultra-thin films and surfaces. We have exploited this feature of SEMPA to study the magnetic microstrcture and magnetic coupling in ferromagnetic multilayers where the layers may only be a few atomic layers thick. For example, we have measured the magnetic coupling in Fe/Cr/Fe(100) and Fe/Ag/Fe(100) trilayers and have found that the coupling oscillates between ferromagnetic and antiferromagnetic as a function of the Cr or Ag spacer thickness.The SEMPA apparatus has been described in detail elsewhere. The sample consisted of a magnetic sandwich structure with a wedge-shaped interlayer as shown in Fig. 1.

Pengaruh implantasi ion tin (Titanium Nitrida) terhadap sifat mekanis baja VCL 140

2010 ◽  
Vol 8 (1) ◽  
pp. 753
Author(s):  
Muhammad Muhammad
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Energy Dispersive Spectroscopy ◽  
Energy Dispersive ◽  
Scanning Electron

Implantasi ion dapat meningkatkan sifat mekanik seperti kekerasan bahan yang akan digunakan untuk komponen dan peralatan proses manufaktur. Implantasi ion dipengaruhi oleh jenis ion dopan, waktu dan energi yang digunakan. Penelitian ini dilakukan untuk mengetahui pengaruh energi dan waktu implantasi ion titanium nitrida terhadap kekerasan dan struktur mikro pada baja VCL 140. Implantasi dilakukan pada arus berkas tetap 10 yA. Variasi waktu 60, 70, 80, 90, 100, 110, 120 menit, energi 75 keV dan variasi energi 15, 30, 45, 60, 75, 90 dan 100 keV dengan waktu implantasi 100 menit dilakukan untuk mendapatkan kekerasan optimum. Uji Kekerasan menggunakan metode Vickers dengan beban 10 gram dan waktu 10 detik. Topografi dari lapisan TIN diamati menggunakan scanning electron microscopy (SEM) dan komposisi kimia dari lapisan TIN dianalisa menggunakan energy dispersive spectroscopy (EDS).Kata kunci : Implantasi ion, VCL 140, kekerasan

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