Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells
2015 ◽
Vol 764-765
◽
pp. 1250-1254
Keyword(s):
The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.
1998 ◽
Vol 184-185
◽
pp. 732-736
◽
Keyword(s):
2013 ◽
Vol 2013
◽
pp. 1-6
◽
1991 ◽
Vol 111
(1-4)
◽
pp. 1080-1083
◽
1998 ◽
Vol 184-185
(1-2)
◽
pp. 732-736
◽