Time Resolved Calorimetry of 30 nm Te-Films During Laser Annealing

1984 ◽  
pp. 25-28 ◽  
Author(s):  
H. Coufal ◽  
W. Lee
Keyword(s):  
Laser Annealing ◽  
Time Resolved

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson
Keyword(s):  
Laser Annealing ◽  
Depth Profiling ◽  
Nanosecond Laser ◽  
Laser Interaction ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Time Resolved ◽  
Au Clusters ◽  
Excimer Laser Radiation ◽  
Compositional Changes

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
John T.A. Pollock ◽  
Alex Rose
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pressure Data ◽  
Incident Laser ◽  
Time Resolved ◽  
Dissociation Pressure ◽  
Pulsed Laser Annealing ◽  
Modelling Studies ◽  
Maximum Temperatures ◽  
Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

scholarly journals Time‐resolved and space‐resolved Si lattice‐temperature measurements during cw laser annealing of Si on sapphire

1984 ◽  
Vol 45 (6) ◽  
pp. 659-661 ◽  
Author(s):  
Kouichi Murakami ◽  
Yoshinori Tohmiya ◽  
Kôki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Temperature Measurements ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Cw Laser

Textured crystallization of germanium telluride

1992 ◽  
Vol 50 (1) ◽  
pp. 24-25
Author(s):  
M. Libera
Keyword(s):  
Laser Annealing ◽  
Optical Storage ◽  
Film Plane ◽  
Optical Measurements ◽  
Transformation Kinetics ◽  
Time Resolved ◽  
Germanium Telluride ◽  
Crystal Matrix ◽  
States Data ◽  
Amorphous States

Phase-change optical storage uses a focused laser to locally switch a chalcogenide film between the crystalline and amorphous states. Data bits are stored as amorphous spots in a crystal matrix. They can be erased by laser annealing, but applications require fast crystallization during the erase. The crystallization kinetics are not well understood. A recent study of germanium telluride (GeTe) used time-resolved optical measurements and TEM to show that crystallization in Ge48Te52 films is dominated by the 2-D growth of crystallites in the film plane. Current work relates the complex crystallite morphology to the operative transformation kinetics.

Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

1989 ◽  
Vol 66 (8) ◽  
pp. 3523-3525 ◽  
Author(s):  
J. R. Buschert ◽  
J. Z. Tischler ◽  
D. M. Mills ◽  
Q. Zhao ◽  
R. Colella
Keyword(s):  
Diffraction Study ◽  
Laser Annealing ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser
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