Depth Resolution of Ion Bombardment Technique Applied to NiPd, NiPt, PtPd, Thin Layer Systems

1982 ◽  
pp. 216-221 ◽  
Author(s):  
J. Giber ◽  
D. Marton ◽  
J. László ◽  
J. Mizsei
Keyword(s):  
Thin Layer ◽  
Depth Resolution ◽  
Ion Bombardment

Interface depth resolution of Auger sputter profiled Ni/Cr interfaces: Dependence on ion bombardment parameters

1985 ◽  
Vol 3 (3) ◽  
pp. 1413-1417 ◽  
Author(s):  
Joseph Fine ◽  
P. A. Lindfors ◽  
M. E. Gorman ◽  
R. L. Gerlach ◽  
B. Navinšek ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Ion Bombardment

scholarly journals Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

2004 ◽  
Vol 2 ◽  
pp. 24-27
Author(s):  
Hyung-Ik Lee ◽  
Dae Won Moon ◽  
Suhk Kun Oh ◽  
Hee Jae Kang ◽  
Hyun Kyong Kim ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Bombardment ◽  
Low Energy

scholarly journals High depth resolution SIMS analysis using metal cluster complex ion bombardment

2008 ◽  
Vol 100 (1) ◽  
pp. 012001 ◽  
Author(s):  
M Tomita ◽  
T Kinno ◽  
M Koike ◽  
H Tanaka ◽  
S Takeno ◽  
...  
Keyword(s):  
Metal Cluster ◽  
Depth Resolution ◽  
Ion Bombardment ◽  
Cluster Complex ◽  
Sims Analysis ◽  
High Depth ◽  
Complex Ion

Dual Layer Photoresist and Back Sputtering Applied in Lift-Off Technique

2007 ◽  
Author(s):  
Lu Zhang ◽  
Le Zhang ◽  
Ying Wang ◽  
Zhenchuan Yang ◽  
Guizhen Yan
Keyword(s):  
High Temperature ◽  
Thin Layer ◽  
Ion Bombardment ◽  
High Energy ◽  
Metal Films ◽  
High Quality ◽  
Lift Off

Lift-off has been widely used in microfabrication process. In normal lift-off process, after photolithography and developing, a thin layer of residua will remain on the exposed substrate. To remove the residua, descum and back sputtering are required before metal sputtering. However, because of the high temperature of descum process and high energy induced by ion bombardment during back sputtering, the up inner angle of photoresist will increase in normal lift-off process. The metal films will deposit on the sidewall of the photoresist, and adhere to the substrate even after the photoresist removal. In order to overcome these problems, a lift-off process adopting dual layer photoresist is introduced in this paper, and high quality metallic pattern could be made.

Lateral resolution of the electron microbeam analysis

1978 ◽  
Vol 36 (1) ◽  
pp. 542-543
Author(s):  
H.J. Dudek
Keyword(s):  
Quantitative Analysis ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Cylindrical Particle ◽  
Correction Procedure ◽  
X Ray ◽  
Element Concentrations ◽  
Microbeam Analysis ◽  
The Matrix

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S

Sign in / Sign up

Export Citation Format

Share Document