Silicon Technology Development and Optimization by Integrated Process, Device and Circuit Simulation System Saturn

Author(s):  
A. Gilg
1990 ◽  
Vol 01 (03n04) ◽  
pp. 303-345 ◽  
Author(s):  
ALEXANDER M. VOSHCHENKOV

Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant concepts of plasma physics and chemistry, based on experience with plasma etching applications for silicon technology, which can be used as building blocks for technology development are described.


Author(s):  
E.W. Scheckler ◽  
A.S. Wong ◽  
R.H. Wang ◽  
G. Chin ◽  
J.R. Camagna ◽  
...  

2009 ◽  
Vol 7 ◽  
pp. 201-211 ◽  
Author(s):  
C. Schlünder

Abstract. Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window. This window is restricted by competing mechanisms like process variations and device degradation (Fig. 1). Degradation mechanisms like Negative Bias Temperature Instability (NBTI) or Hot Carrier Injection (HCI) lead to parameter drifts during operation adding on top of the process variations. The safety margin between real lifetime of MOSFETs and product lifetime requirements decreases at advanced technologies. The assignment of tasks to ensure the product lifetime has to be changed for the future. Up to now technology development has the main responsibility to adjust the technology processes to achieve the required lifetime. In future, reliability can no longer be the task of technology development only. Device degradation becomes a collective challenge for semiconductor technologist, reliability experts and circuit designers. Reliability issues have to be considered in design as well to achieve reliable and competitive products. For this work, designers require support by smart software tools with built-in reliability know how. Design for reliability will be one of the key requirements for modern product designs. An overview will be given of the physical device damage mechanisms, the operation conditions within circuits leading to stress and the impact of the corresponding device parameter degradation on the function of the circuit. Based on this understanding various approaches for Design for Reliability (DfR) will be described. The function of aging simulators will be explained and the flow of circuit-simulation will be described. Furthermore, the difference between full custom and semi custom design and therefore, the different required approaches will be discussed.


Author(s):  
D. David Forsythe ◽  
Atul P. Agarwal ◽  
Chune-Sin Yeh ◽  
Sheldon Aronowitz ◽  
Bhaskar Gadepally

1997 ◽  
Vol 469 ◽  
Author(s):  
Martin D. Giles ◽  
Shaofeng Yu ◽  
Harold W. Kennel ◽  
Paul A. Packan

ABSTRACTDespite more than 20 years of effort, detailed understanding of defect-coupled dopant diffusion in silicon still falls short of what is practically required to support state-of-the-art silicon technology development. The challenge for modeling in industry is to combine the best of our physical understanding with measurements of dopant profiles for technology-relevant conditions to provide models which are as predictive and efficient as possible. This paper presents experimental results which provide insight into damage generation and annealing processes and discusses practical modeling approaches to support technology development despite our incomplete understanding of the physical processes involved.


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