Sims Analysis of SiC Coated and Uncoated Nicalon Fibers

1989 ◽  
pp. 273-278
Author(s):  
M. Lancin ◽  
J. S. Bour
Keyword(s):  
Sims Analysis

An Effective SIMS Methodology for GOI Contamination Analysis

2013 ◽  
Author(s):  
Yanhua Huang ◽  
Lei Zhu ◽  
Kenny Ong ◽  
Hanwei Teo ◽  
Younan Hua
Keyword(s):  
Oxide Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Oxide ◽  
Sample Surface ◽  
Low Energy ◽  
Cross Contamination ◽  
Common Effect ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Lower Background

Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.

scholarly journals Evaluation of the Electric Field above a Specimen Surface during SIMS Analysis.

2000 ◽  
Vol 16 (5) ◽  
pp. 483-485 ◽  
Author(s):  
Hideyuki YAMAZAKI ◽  
Toshiyuki ENDA
Keyword(s):  
Electric Field ◽  
Specimen Surface ◽  
Sims Analysis

XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5mol% H2/Ar) atmosphere

2008 ◽  
Vol 255 (5) ◽  
pp. 2388-2399 ◽  
Author(s):  
S. Achiwawanich ◽  
B.D. James ◽  
J. Liesegang
Keyword(s):  
Tof Sims ◽  
Heat Treated ◽  
Sims Analysis

SIMS Analysis of Xe and Kr in a High Burn-up UO2 Nuclear Fuel

2008 ◽  
Vol 14 (S2) ◽  
pp. 1092-1093 ◽  
Author(s):  
CT Walker ◽  
S Brémier ◽  
S Portier ◽  
R Hasnaoui
Keyword(s):  
New Mexico ◽  
Nuclear Fuel ◽  
Sims Analysis

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

scholarly journals Hydrogen accumulation in and at the perimeter of U–C–N–O inclusions in uranium – A SIMS analysis

2015 ◽  
Vol 645 ◽  
pp. S225-S229 ◽  
Author(s):  
W.J. Siekhaus ◽  
P.K. Weber ◽  
I.D. Hutcheon ◽  
J.E.P. Matzel ◽  
W. McLean
Keyword(s):  
Hydrogen Accumulation ◽  
Sims Analysis

SIMS-analysis of shallow implants in silicon

1986 ◽  
Vol 9 (5) ◽  
pp. 340-340
Author(s):  
D. Avau ◽  
W. Vandervorst ◽  
H. E. Maes
Keyword(s):  
Sims Analysis

A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  
Keyword(s):  
Flat Band ◽  
Gas Mixture ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Boron Doped ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

3D-SIMS analysis of ultra high purity molybdenum and tungsten: a characterisation of different manufacturing techniques and products

1995 ◽  
Vol 353 (5-8) ◽  
pp. 524-532 ◽  
Author(s):  
Peter Wilhartitz ◽  
R. Krismer ◽  
H. Hutter ◽  
M. Grasserbauer ◽  
S. Weinbruch ◽  
...  
Keyword(s):  
High Purity ◽  
Ultra High Purity ◽  
Sims Analysis ◽  
Manufacturing Techniques ◽  
And Tungsten
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