3-D Patterned III-V Semiconductor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE

1996 ◽  
pp. 35-39
Author(s):  
P. D. Rose ◽  
E. H. Linfield ◽  
G. A. C. Jones ◽  
D. A. Ritchie
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
High Energy ◽  
Ion Beam Lithography

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

Focused Ion Beam Micro- and Nanoengineering

MRS Bulletin ◽  
2007 ◽  
Vol 32 (5) ◽  
pp. 417-423 ◽  
Author(s):  
Richard M. Langford ◽  
Philipp M. Nellen ◽  
Jacques Gierak ◽  
Yongqi Fu
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Processing Techniques

AbstractThis article discusses applications of focused ion beam micro- and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.

GaAs/AlGaAs device fabrication using MBE growth and in situ focused ion beam lithography

1996 ◽  
Vol 227 (1-4) ◽  
pp. 264-267 ◽  
Author(s):  
G.A.C. Jones ◽  
P.D. Rose ◽  
E.H. Linfield ◽  
D.A. Ritchie
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Fabrication ◽  
Mbe Growth ◽  
Ion Beam Lithography

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

2015 ◽  
Vol 821-823 ◽  
pp. 965-969
Author(s):  
Fernando Lloret ◽  
D. Araujo ◽  
M.P. Villar ◽  
L. Liu ◽  
Konstantinos Zekentes
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Si Nanowires ◽  
Transmission Electron ◽  
Set Up

Si nanowires (NWs) samples have been converted to silicon carbide (SiC) NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular beam epitaxy (MBE) set-up. Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED) have been in-situ carried out to control the growth process. Scanning electron microscopy (SEM) and conventional transmission electron microscopy (CTEM) have been used to characterize the resulting nanostructures. In addition, the samples have been prepared by focused ion beam (FIB) in order to have electron-transparently lamellas for TEM with the interface nanowire-substrate. SiC/Si shell/core NWs free of planar defects have been obtained for conversion tmpratures lower than 800oC.

High energy focused ion beam lithography using P-beam writing

2005 ◽  
Vol 241 (1-4) ◽  
pp. 397-401 ◽  
Author(s):  
Gary A. Glass ◽  
Bibhudutta Rout ◽  
Alexander D. Dymnikov ◽  
Richard R. Greco ◽  
Mithun Kamal ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beam Lithography

Equilibrium tunneling between two‐dimensional and quasi‐one‐dimensional electron gases in devices fabricated by in situ focused ion beam lithography

1996 ◽  
Vol 68 (6) ◽  
pp. 826-828 ◽  
Author(s):  
B. Kardynal/ ◽  
E. H. Linfield ◽  
D. A. Ritchie ◽  
K. M. Brown ◽  
C. H. W. Barnes ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
One Dimensional ◽  
Ion Beam Lithography
Sign in / Sign up

Export Citation Format

Share Document