Screening Length, Terahertz Frequency and Opto-electronic Compounds

2021 ◽  
pp. 325-363
Author(s):  
R. Paul ◽  
J. Pal ◽  
S. Chakrabarti ◽  
B. Chatterjee ◽  
P. K. Das ◽  
...  
Keyword(s):  
Terahertz Frequency ◽  
Screening Length

Information and Dose in the Scanning Transmission Ion Microscope

1980 ◽  
Vol 38 ◽  
pp. 232-233
Author(s):  
Fox T. R. ◽  
R. Levi-Setti
Keyword(s):  
Information Retrieval ◽  
Electron Microscope ◽  
Elastic Scattering ◽  
Energy Loss ◽  
Cross Sections ◽  
Previous Analysis ◽  
Single Scattering ◽  
Screening Length ◽  
Relative Damage ◽  
Scanning Transmission

At an earlier meeting [1], we discussed information retrieval in the scanning transmission ion microscope (STIM) compared with the electron microscope at the same energy. We treated elastic scattering contrast, using total elastic cross sections; relative damage was estimated from energy loss data. This treatment is valid for “thin” specimens, where the incident particles suffer only single scattering. Since proton cross sections exceed electron cross sections, a given specimen (e.g., 1 μg/cm2 of carbon at 25 keV) may be thin for electrons but “thick” for protons. Therefore, we now extend our previous analysis to include multiple scattering. Our proton results are based on the calculations of Sigmund and Winterbon [2], for 25 keV protons on carbon, using a Thomas-Fermi screened potential with a screening length of 0.0226 nm. The electron results are from Crewe and Groves [3] at 30 keV.

FORM BIREFRINGENT STRUCTURES MATCHING TO FREE SPACE IN THE TERAHERTZ FREQUENCY RANGE

2015 ◽  
Vol 74 (19) ◽  
pp. 1767-1776 ◽  
Author(s):  
V. I. Bezborodov ◽  
O.S. Kosiak ◽  
Ye. M. Kuleshov ◽  
V. V. Yachin
Keyword(s):  
Free Space ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

HIGH FREQUENCY OHMIC LOSSES IN TERAHERTZ FREQUENCY RANGE CW KLYNOTRONS

2017 ◽  
Vol 76 (10) ◽  
pp. 929-940 ◽  
Author(s):  
Yu. S. Kovshov ◽  
S. S. Ponomarenko ◽  
S. A. Kishko ◽  
A. A. Likhachev ◽  
S. A. Vlasenko ◽  
...  
Keyword(s):  
High Frequency ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range ◽  
Ohmic Losses

Quasi-Optical Polarization Attenuators in the Terahertz Frequency Band

2008 ◽  
Vol 67 (13) ◽  
pp. 1207-1215 ◽  
Author(s):  
V. K. Kiselyov ◽  
M. S. Yanovsky ◽  
V. I. Bezborodov ◽  
Ye. M. Kuleshov
Keyword(s):  
Frequency Band ◽  
Optical Polarization ◽  
Terahertz Frequency

Deep Impurities with Collision Delay

2018 ◽  
Author(s):  
Klaus Morawetz
Keyword(s):  
Wave Function ◽  
Kinetic Equation ◽  
Elastic Scattering ◽  
Response Function ◽  
Plasma Oscillation ◽  
Impurity Scattering ◽  
Fermi Momentum ◽  
Screening Length ◽  
Plasma Mode ◽  
Dissipative Mechanism

The linearised nonlocal kinetic equation is solved analytically for impurity scattering. The resulting response function provides the conductivity, plasma oscillation and Fermi momentum. It is found that virial corrections nearly compensate the wave-function renormalizations rendering the conductivity and plasma mode unchanged. Due to the appearance of the correlated density, the Luttinger theorem does not hold and the screening length is influenced. Explicit results are given for a typical semiconductor. Elastic scattering of electrons by impurities is the simplest but still very interesting dissipative mechanism in semiconductors. Its simplicity follows from the absence of the impurity dynamics, so that individual collisions are described by the motion of an electron in a fixed potential.

Active modulation of refractive index by stress in the terahertz frequency range

2013 ◽  
Vol 52 (25) ◽  
pp. 6364 ◽  
Author(s):  
Lin’an Li ◽  
Wei Song ◽  
Zhiyong Wang ◽  
Shibin Wang ◽  
Mingxia He ◽  
...  
Keyword(s):  
Refractive Index ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

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