An etch rate study on thermally annealed SiO2 films deposited in a TEOS-LPCVD system

1990 ◽  
Vol 25 (2) ◽  
pp. 1366-1368 ◽  
Author(s):  
C. Orfescu ◽  
C. Pavelescu ◽  
M. Badila
Keyword(s):  
Etch Rate ◽  
Sio2 Films ◽  
Rate Study

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

2009 ◽  
Vol 145-146 ◽  
pp. 203-206 ◽  
Author(s):  
Sonja Sioncke ◽  
David P. Brunco ◽  
Marc Meuris ◽  
Olivier Uwamahoro ◽  
Jan Van Steenbergen ◽  
...  
Keyword(s):  
Etch Rate ◽  
Carrier Mobility ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Materials ◽  
Semiconductor Processing ◽  
Moore’S Law ◽  
Rate Study ◽  
Chemical Solutions ◽  
Etch Rates

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.

In-situ etch rate study of HfxLayOz in Cl2/BCl3 plasmas using the quartz crystal microbalance

2015 ◽  
Vol 33 (3) ◽  
pp. 031305 ◽  
Author(s):  
Nathan Marchack ◽  
Taeseung Kim ◽  
Hans-Olof Blom ◽  
Jane P. Chang
Keyword(s):  
Quartz Crystal Microbalance ◽  
Etch Rate ◽  
Quartz Crystal ◽  
Rate Study
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