Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

2009 ◽  
Vol 145-146 ◽  
pp. 203-206 ◽  
Author(s):  
Sonja Sioncke ◽  
David P. Brunco ◽  
Marc Meuris ◽  
Olivier Uwamahoro ◽  
Jan Van Steenbergen ◽  
...  
Keyword(s):  
Etch Rate ◽  
Carrier Mobility ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Materials ◽  
Semiconductor Processing ◽  
Moore’S Law ◽  
Rate Study ◽  
Chemical Solutions ◽  
Etch Rates

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.

Advances in Test Wafer Reclaim Technology – Wet Stripping Porous Low-k Films with No Substrate Damage

2009 ◽  
Vol 145-146 ◽  
pp. 339-342 ◽  
Author(s):  
Mark Robson ◽  
Kristin A. Fletcher ◽  
Ping Jiang ◽  
Michael B. Korzenski ◽  
A. Upham ◽  
...  
Keyword(s):  
Film Thickness ◽  
Etch Rate ◽  
Oxide Growth ◽  
Semiconductor Processing ◽  
Related Cost ◽  
Increasing Demand ◽  
Wet Etch ◽  
Low K

In semiconductor processing, test wafers are used as particle monitors, film thickness monitors for deposition and oxide growth measurements, dry/wet etch rate monitors, CMP monitors, as well as characterizing new and existing equipment and processes. Depending on fab size and capacity, monthly test wafer usage can be tens of thousands or more. Due to the ever increasing demand for silicon between the IC and solar markets and the high cost of 300mm wafers, chip manufacturers are increasing their efforts to reduce overall spending on silicon - currently by far the largest non equipment related cost [1]. One approach taken by many chip makers is the concept of extending the usable life of test wafers by re-using them as many times as possible through a reclaim process.

Dry Etching of Indium Phosphide

1992 ◽  
Vol 262 ◽  
Author(s):  
P. Bond ◽  
P. Sengupta ◽  
Kevin G. Orrman-Rossiter ◽  
G. K. Reeves ◽  
P. J. K. Paterson
Keyword(s):  
Indium Phosphide ◽  
Etch Rate ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Building Blocks ◽  
Photonic Devices ◽  
Ion Energy ◽  
Growth Area ◽  
Argon Ion ◽  
Main Growth

ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices. Traditional wet etching techniques have often proved to be inadequate for the required anisotropie removal of material. This paper presents the results of etching semi-insulating InP (100) using a combination of an Argon ion beam and a reactive gas, CCl2F2 (Freon 12). It was found that the etch rate was enhanced by increasing the ion energy and by the addition of CCl2F2. Auger electron spectroscopy revealed that the increased etch rate was accompanied by an increase in the surface indium concentration and at low ion beam energies carbon build-up retarded the etch rate. The optimum etch angle to fabricate 3μm waveguides was found to be 22° to the surface normal, however Schottky contacts to these structures were unsuccessful.

Cleaning of III-V Materials: Surface Chemistry Considerations

2012 ◽  
Vol 195 ◽  
pp. 98-99 ◽  
Author(s):  
Dennis H. van Dorp ◽  
Daniel Cuypers ◽  
Sophia Arnauts ◽  
Paul W. Mertens ◽  
Stefan de Gendt
Keyword(s):  
Charge Carrier ◽  
Surface Chemistry ◽  
Carrier Mobility ◽  
Compound Semiconductors ◽  
Charge Carrier Mobility ◽  
Group Iii ◽  
Acidic Solutions ◽  
Chemical Solutions ◽  
Wet Chemical ◽  
High Charge Carrier Mobility

Compound semiconductors based on group III and V elements of the periodic system have high charge carrier mobility and are, therefore, candidates for channel material in future CMOS devices [1]. In order to design wet chemical solutions that lead to appropriate surface pre-conditioning and allow for nanoscale processing and minimal substrate loss, a thorough understanding of the interactions between the substrate and the chemical solutions is needed and the basic etching mechanisms needs to be resolved. The focus of this research is on InP in acidic solutions. ESH aspects are also considered.

Maintaining The Pace of Progress As We Approach The End Of Moore's Law: New Materials, New Processes, New Architectures

2015 ◽  
Vol 2015 (S1) ◽  
pp. S1-S57 ◽  
Author(s):  
Bill Bottoms
Keyword(s):  
Internet Of Things ◽  
Electronics Industry ◽  
Heterogeneous Integration ◽  
Market Demand ◽  
New Materials ◽  
Manufacturing Equipment ◽  
Moore’S Law ◽  
Moore's Law ◽  
Current Technology ◽  
And Migration

The environment is rapidly changing as we approach the end of Moore's Law scaling. Scaling continues but benefits in performance, power and cost are reduced. At the same time drivers for the electronics industry are impacted by the emerging Internet of Things and Migration to the Cloud. Satisfying these requirements of these emerging drivers cannot be accomplished with the current technology. It will require innovative heterogeneous integration approaches to satisfy demands for power, latency, bandwidth, reliability and cost in an environment where transistors will wear out. Overcoming the limitations of the current technology will require heterogeneous integration using different materials, different device types (logic, memory, sensors, RF, analog, etc.) and different components incorporating multiple technologies including electronics, photonics, and MEMS in new, 3D, system-in-package (SiP) architectures. New materials, manufacturing equipment and processes will be required to accomplish this and meet the market demand for continuous reduction in cost per function. The requirements, difficult challenges and potential solutions will be discussed.

Laser Diagnostics of Semiconductor Processing Systems

1984 ◽  
Vol 38 ◽  
Author(s):  
Joda C. Wormhoudt ◽  
Alan C. Stanton ◽  
Joel A. Silver
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Laser Diagnostics ◽  
Semiconductor Industry ◽  
Spectroscopic Characterization ◽  
Detection Sensitivity ◽  
Semiconductor Processing ◽  
Laser Techniques

AbstractTwo processes of great importance in the semiconductor industry are vapor deposition and plasma etching. This paper presents a review of laser techniques for spectroscopic characterization of the gas phase species involved in these processes. Band strength and other spectroscopic data for selected molecules are used to give estimates of the detection sensitivity in vibrational and electronic bands. Preliminary results are given from work presently in progress in our laboratory on the detection of such species. The discussion includes examples of the application of these techniques to a number of laboratory deposition and etching devices.

Waste Minimization In Semiconductor Processing

1994 ◽  
Vol 344 ◽  
Author(s):  
Steven J. Hardwick ◽  
Joanne C. Mailloux
Keyword(s):  
Activated Carbon ◽  
Copper Oxide ◽  
Active Ingredient ◽  
Mixed Oxide ◽  
Semiconductor Industry ◽  
Waste Product ◽  
High Capacity ◽  
Waste Minimization ◽  
Semiconductor Processing ◽  
The Us

AbstractThe US semiconductor industry uses 5–7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. A proprietary mixed oxide composition, employing copper oxide as the active ingredient was identified as having high capacity and efficiency. Disposal and possible reclamation options are discussed.

Measurement of Carrier Concentration of Si by One Pair of Hot and Cold Needles

2011 ◽  
Vol 421 ◽  
pp. 107-109
Author(s):  
Yu Zhao ◽  
Yan Yan Zhu
Keyword(s):  
Carrier Concentration ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Method ◽  
Theoretical Computation ◽  
Thermoelectromotive Force ◽  
Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of Si was put forward. The dependence of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

scholarly journals A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Seon-Geun Oh ◽  
Kwang-Su Park ◽  
Young-Jun Lee ◽  
Jae-Hong Jeon ◽  
Hee-Hwan Choe ◽  
...  
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Optical Emission ◽  
Process Conditions ◽  
Square Root ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Atomic Fluorine ◽  
Gas Flow Ratio ◽  
Etch Rates

The characteristics of the dry etching ofSiNx:H thin films for display devices using SF6/O2and NF3/O2were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For theSiNx:H film, the etch rates obtained using NF3/O2were higher than those obtained using SF6/O2under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltagesVHandVL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine(I(F))and the square root of the voltages(Vh+Vl)on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

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