Etch rate behaviour of SiO2 films chemically vapour deposited at low temperatures in TEOSO2N2 system

1990 ◽  
Vol 192 (1) ◽  
pp. L9-L13
Author(s):  
Irina Kleps ◽  
Cristian Pavelescu
Keyword(s):  
Low Temperatures ◽  
Etch Rate ◽  
Sio2 Films ◽  
Rate Behaviour

scholarly journals Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 914-919 ◽  
Author(s):  
J. T. Hsieh ◽  
J. M. Hwang ◽  
H. L. Hwang ◽  
W. H. Hung
Keyword(s):  
Surface Morphology ◽  
Root Mean Square ◽  
Low Temperatures ◽  
Etch Rate ◽  
Root Mean Square Roughness ◽  
Mean Square ◽  
Photoluminescence Spectra ◽  
Yellow Luminescence ◽  
Etching Technique ◽  
193 Nm

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Model for Al Etch-Rate Enhancement at Low Temperatures

1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6095-6101 ◽  
Author(s):  
Takashi Uchida ◽  
Hidemitsu Aoki ◽  
Masami Hane ◽  
Shinya Hasegawa ◽  
Eiji Ikawa
Keyword(s):  
Low Temperatures ◽  
Etch Rate ◽  
Rate Enhancement

Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2

1990 ◽  
Vol 19 (12) ◽  
pp. 1411-1415 ◽  
Author(s):  
A. Ortiz ◽  
S. Lopez ◽  
C. Falcony ◽  
M. Farias ◽  
L. Cota-Araiza ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Sio2 Films
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