Influence of proton-induced defects on transport and structural properties of ceramic YBCO

1993 ◽  
Vol 6 (4) ◽  
pp. 237-241 ◽  
Author(s):  
E. Mezzetti ◽  
F. Abbattista ◽  
D. Andreone ◽  
R. Cherubini ◽  
R. Gerbaldo ◽  
...  
Keyword(s):  
Structural Properties ◽  
Induced Defects ◽  
Ceramic Ybco

THE EFFECT OF In0.1Ga0.9As UNDERLYING LAYER ON THE STRUCTURAL PROPERTIES OF SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

NANO ◽  
2011 ◽  
Vol 06 (02) ◽  
pp. 153-157 ◽  
Author(s):  
DIDIK ARYANTO ◽  
ZULKAFLI OTHAMAN ◽  
ABD. KHAMIM ISMAIL
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Strain Relaxation ◽  
Single Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Tem Characterization ◽  
Transmission Electron ◽  
Gaas Buffer Layer ◽  
Induced Defects

The effect of a thin In0.1Ga0.9As underlying layer on the structural properties of single layer In0.5Ga0.5As quantum dots (QDs) was investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HR-XRD) characterization. The size of dots formed on the surface is uniform but the density increases with the addition of In0.1Ga0.9As underlying between In0.5Ga0.5As QDs and GaAs buffer layer. This is consistent with the TEM characterization. The existence of thin underlying layer has caused the dots to have different crystal orientation as shown in TEM characterization. From the HR-XRD characterization, broad peak of In0.1Ga0.9As underlying layer and QDs has been observed. The wider width of the layer peak than the expected one has been attributed to the strain-relaxation-induced defects. The growth of a thin In0.1Ga0.9As underlying layer in the In0.5Ga0.5As/GaAs structures strongly affects the structural properties, which was also believed to influence the optical properties of QDs.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Newborn's Preference for Faces

1996 ◽  
Vol 1 (3) ◽  
pp. 200-205 ◽  
Author(s):  
Carlo Umiltà ◽  
Francesca Simion ◽  
Eloisa Valenza
Keyword(s):  
Visual System ◽  
Structural Properties ◽  
Sensory Properties ◽  
Human Face ◽  
System Experiment ◽  
Face Experiment

Four experiments were aimed at elucidating some aspects of the preference for facelike patterns in newborns. Experiment 1 showed a preference for a stimulus whose components were located in the correct arrangement for a human face. Experiment 2 showed a preference for stimuli that had optimal sensory properties for the newborn visual system. Experiment 3 showed that babies directed their attention to a facelike pattern even when it was presented simultaneously with a non-facelike stimulus with optimal sensory properties. Experiment 4 showed the preference for facelike patterns in the temporal hemifield but not in the nasal hemifield. It was concluded that newborns' preference for facelike patterns reflects the activity of a subcortical system which is sensitive to the structural properties of the stimulus.

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