Effect of a substrate on the temperature distribution in an argon-hydrogen thermal plasma jet

1994 ◽  
Vol 14 (4) ◽  
pp. 407-423 ◽  
Author(s):  
D. Lapierre ◽  
R. J. Kearney ◽  
M. Vardelle ◽  
A. Vardelle ◽  
P. Fauchais
Keyword(s):  
Temperature Distribution ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Thermal Plasma Jet

Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet

2007 ◽  
Vol 515 (12) ◽  
pp. 4897-4900 ◽  
Author(s):  
T. Okada ◽  
S. Higashi ◽  
H. Kaku ◽  
N. Koba ◽  
H. Murakami ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Thermal Plasma ◽  
Substrate Surface ◽  
Plasma Jet ◽  
Thermal Plasma Jet

A new crystallization technique of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 244 (1-4) ◽  
pp. 8-11 ◽  
Author(s):  
H. Kaku ◽  
S. Higashi ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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